Abstract
We report morphological and electrical differences in micron scale silicon lines deposited by laser-induced chemical vapor deposition, using a range of laser powers and scan rates. We also show how changes in substrate reflectivity can affect and control the deposition reaction.
| Original language | English |
|---|---|
| Pages (from-to) | 4446-4448 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 58 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1985 |
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