Abstract
We report morphological and electrical differences in micron scale silicon lines deposited by laser-induced chemical vapor deposition, using a range of laser powers and scan rates. We also show how changes in substrate reflectivity can affect and control the deposition reaction.
Original language | English |
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Pages (from-to) | 4446-4448 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 58 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1985 |