Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm

Zhibo Li; Craig P. Allford; Samuel Shutts; Adam F. Forrest; Reem Alharbi; Andrey B. Krysa; Maria Ana Cataluna; Peter M. Smowton

doi:10.1109/LPT.2020.3012568

Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm

Zhibo Li^*
, Craig P. Allford
, Samuel Shutts
, Adam F. Forrest
, Reem Alharbi
, Andrey B. Krysa
, Maria Ana Cataluna
, Peter M. Smowton

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

217 Downloads (Pure)

Abstract

This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.

Original language	English
Pages (from-to)	1073-1076
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	32
Issue number	17
Early online date	28 Jul 2020
DOIs	https://doi.org/10.1109/LPT.2020.3012568
Publication status	Published - 1 Sept 2020

Keywords

InP quantum dots
Mode-locked laser diode
monolithic integration

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{23750f943ae4403aba52eb1ed464b0a1,

title = "Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm",

abstract = "This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.",

keywords = "InP quantum dots, Mode-locked laser diode, monolithic integration",

author = "Zhibo Li and Allford, \{Craig P.\} and Samuel Shutts and Forrest, \{Adam F.\} and Reem Alharbi and Krysa, \{Andrey B.\} and Cataluna, \{Maria Ana\} and Smowton, \{Peter M.\}",

year = "2020",

month = sep,

day = "1",

doi = "10.1109/LPT.2020.3012568",

language = "English",

volume = "32",

pages = "1073--1076",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "IEEE",

number = "17",

}

TY - JOUR

T1 - Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm

AU - Li, Zhibo

AU - Allford, Craig P.

AU - Shutts, Samuel

AU - Forrest, Adam F.

AU - Alharbi, Reem

AU - Krysa, Andrey B.

AU - Cataluna, Maria Ana

AU - Smowton, Peter M.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.

AB - This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.

KW - InP quantum dots

KW - Mode-locked laser diode

KW - monolithic integration

UR - https://www.scopus.com/pages/publications/85089684251

U2 - 10.1109/LPT.2020.3012568

DO - 10.1109/LPT.2020.3012568

M3 - Article

AN - SCOPUS:85089684251

SN - 1041-1135

VL - 32

SP - 1073

EP - 1076

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 17

ER -

Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm

Abstract

Keywords

ASJC Scopus subject areas

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