Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm

Zhibo Li*, Craig P. Allford, Samuel Shutts, Adam F. Forrest, Reem Alharbi, Andrey B. Krysa, Maria Ana Cataluna, Peter M. Smowton

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)
56 Downloads (Pure)


This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.

Original languageEnglish
Pages (from-to)1073-1076
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number17
Early online date28 Jul 2020
Publication statusPublished - 1 Sept 2020


  • InP quantum dots
  • Mode-locked laser diode
  • monolithic integration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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