Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

N. S. Bennett, N. E. B. Cowern, B. J. Sealy

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@article{e750de4f776746828fa64ca6bdaa2d9b,

title = "Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon",

author = "Bennett, \{N. S.\} and Cowern, \{N. E. B.\} and Sealy, \{B. J.\}",

year = "2009",

month = jun,

day = "26",

doi = "10.1063/1.3159821",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

AU - Bennett, N. S.

AU - Cowern, N. E. B.

AU - Sealy, B. J.

PY - 2009/6/26

Y1 - 2009/6/26

U2 - 10.1063/1.3159821

DO - 10.1063/1.3159821

M3 - Article

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252109

ER -