Original language | English |
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Article number | 252109 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 25 |
DOIs | |
Publication status | Published - 26 Jun 2009 |
Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon
N. S. Bennett, N. E. B. Cowern, B. J. Sealy
Research output: Contribution to journal › Article › peer-review
14
Citations
(Scopus)