Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

N. S. Bennett, N. E. B. Cowern, B. J. Sealy

Research output: Contribution to journalArticle

LanguageEnglish
Article number252109
Number of pages3
JournalApplied Physics Letters
Volume94
Issue number25
DOIs
Publication statusPublished - 26 Jun 2009

Cite this

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title = "Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon",
author = "Bennett, {N. S.} and Cowern, {N. E. B.} and Sealy, {B. J.}",
year = "2009",
month = "6",
day = "26",
doi = "10.1063/1.3159821",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon. / Bennett, N. S.; Cowern, N. E. B.; Sealy, B. J.

In: Applied Physics Letters, Vol. 94, No. 25, 252109, 26.06.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

AU - Bennett, N. S.

AU - Cowern, N. E. B.

AU - Sealy, B. J.

PY - 2009/6/26

Y1 - 2009/6/26

U2 - 10.1063/1.3159821

DO - 10.1063/1.3159821

M3 - Article

VL - 94

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 252109

ER -