Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

N. S. Bennett, N. E. B. Cowern, B. J. Sealy

Research output: Contribution to journalArticle

10 Citations (Scopus)
Original languageEnglish
Article number252109
Number of pages3
JournalApplied Physics Letters
Volume94
Issue number25
DOIs
Publication statusPublished - 26 Jun 2009

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