Minimization of baseband electrical memory effects in GaN HEMTs using active IF load-pull

M. Akmal, J. Lees, V. Carrubba, S. Ben Smida, S. Woodington, J. Benedikt, K. Morris, M. Beach, J. McGeehan, P. J. Tasker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics extracted from measured input voltage and output current envelopes of a power device. Investigations have been carried out using a commercially available 10W GaN HEMT device characterised at 2GHz within a high-power modulated wavefor measurement system. Active IF loadpull has been employed to present specific baseband impedance environments, allowing the sensitivity of IMD symmetry to baseband impedance variations to be investigated.
Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference
PublisherIEEE
ISBN (Electronic)9784902339215
ISBN (Print)9781424475902
Publication statusPublished - 10 Mar 2011

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    Akmal, M., Lees, J., Carrubba, V., Ben Smida, S., Woodington, S., Benedikt, J., Morris, K., Beach, M., McGeehan, J., & Tasker, P. J. (2011). Minimization of baseband electrical memory effects in GaN HEMTs using active IF load-pull. In 2010 Asia-Pacific Microwave Conference [5728576] IEEE. https://ieeexplore.ieee.org/document/5728576