This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics extracted from measured input voltage and output current envelopes of a power device. Investigations have been carried out using a commercially available 10W GaN HEMT device characterised at 2GHz within a high-power modulated wavefor measurement system. Active IF loadpull has been employed to present specific baseband impedance environments, allowing the sensitivity of IMD symmetry to baseband impedance variations to be investigated.
|Title of host publication||2010 Asia-Pacific Microwave Conference|
|Publication status||Published - 10 Mar 2011|
Akmal, M., Lees, J., Carrubba, V., Ben Smida, S., Woodington, S., Benedikt, J., Morris, K., Beach, M., McGeehan, J., & Tasker, P. J. (2011). Minimization of baseband electrical memory effects in GaN HEMTs using active IF load-pull. In 2010 Asia-Pacific Microwave Conference  IEEE. https://ieeexplore.ieee.org/document/5728576