Mid-infrared induced quenching of photoluminescence in Si: Er

M. Forcales; I. V. Bradley; J. P R Wells; T. Gregorkiewicz

doi:10.1016/S0921-5107(00)00741-8

Mid-infrared induced quenching of photoluminescence in Si: Er

M. Forcales, I. V. Bradley, J. P R Wells, T. Gregorkiewicz

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Abstract

The recently reported effect of luminescence quenching by a mid-infrared (MIR) pulse from a free-electron laser was investigated in various Si:Er materials. No quenching was observed in Si:Er samples whose photoluminescence spectra were dominated by the so-called 'cubic' centers. Furthermore, in addition to the low-symmetry Er-related spectra, the MIR-induced quenching was found to take place also for a broad emission band centered around 1.4 µm, and usually assigned to implantation damage. The band-edge excitonic emission remained unaffected by the MIR radiation. © 2001 Elsevier Science B.V.

Original language	English
Pages (from-to)	80-82
Number of pages	3
Journal	Materials Science and Engineering: B
Volume	81
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00741-8
Publication status	Published - 24 Apr 2001

Keywords

Erbium
Free-electron laser
Photoluminescence
Silicon

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10.1016/S0921-5107(00)00741-8

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title = "Mid-infrared induced quenching of photoluminescence in Si: Er",

abstract = "The recently reported effect of luminescence quenching by a mid-infrared (MIR) pulse from a free-electron laser was investigated in various Si:Er materials. No quenching was observed in Si:Er samples whose photoluminescence spectra were dominated by the so-called 'cubic' centers. Furthermore, in addition to the low-symmetry Er-related spectra, the MIR-induced quenching was found to take place also for a broad emission band centered around 1.4 µm, and usually assigned to implantation damage. The band-edge excitonic emission remained unaffected by the MIR radiation. {\textcopyright} 2001 Elsevier Science B.V.",

keywords = "Erbium, Free-electron laser, Photoluminescence, Silicon",

author = "M. Forcales and Bradley, {I. V.} and Wells, {J. P R} and T. Gregorkiewicz",

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doi = "10.1016/S0921-5107(00)00741-8",

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TY - JOUR

T1 - Mid-infrared induced quenching of photoluminescence in Si

T2 - Er

AU - Forcales, M.

AU - Bradley, I. V.

AU - Wells, J. P R

AU - Gregorkiewicz, T.

PY - 2001/4/24

Y1 - 2001/4/24

N2 - The recently reported effect of luminescence quenching by a mid-infrared (MIR) pulse from a free-electron laser was investigated in various Si:Er materials. No quenching was observed in Si:Er samples whose photoluminescence spectra were dominated by the so-called 'cubic' centers. Furthermore, in addition to the low-symmetry Er-related spectra, the MIR-induced quenching was found to take place also for a broad emission band centered around 1.4 µm, and usually assigned to implantation damage. The band-edge excitonic emission remained unaffected by the MIR radiation. © 2001 Elsevier Science B.V.

AB - The recently reported effect of luminescence quenching by a mid-infrared (MIR) pulse from a free-electron laser was investigated in various Si:Er materials. No quenching was observed in Si:Er samples whose photoluminescence spectra were dominated by the so-called 'cubic' centers. Furthermore, in addition to the low-symmetry Er-related spectra, the MIR-induced quenching was found to take place also for a broad emission band centered around 1.4 µm, and usually assigned to implantation damage. The band-edge excitonic emission remained unaffected by the MIR radiation. © 2001 Elsevier Science B.V.

KW - Erbium

KW - Free-electron laser

KW - Photoluminescence

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0035942416&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(00)00741-8

DO - 10.1016/S0921-5107(00)00741-8

M3 - Article

SN - 0921-5107

VL - 81

SP - 80

EP - 82

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

Mid-infrared induced quenching of photoluminescence in Si: Er

Abstract

Keywords

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