Mid-infrared induced quenching of photoluminescence in Si: Er

M. Forcales, I. V. Bradley, J. P R Wells, T. Gregorkiewicz

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    Abstract

    The recently reported effect of luminescence quenching by a mid-infrared (MIR) pulse from a free-electron laser was investigated in various Si:Er materials. No quenching was observed in Si:Er samples whose photoluminescence spectra were dominated by the so-called 'cubic' centers. Furthermore, in addition to the low-symmetry Er-related spectra, the MIR-induced quenching was found to take place also for a broad emission band centered around 1.4 µm, and usually assigned to implantation damage. The band-edge excitonic emission remained unaffected by the MIR radiation. © 2001 Elsevier Science B.V.

    Original languageEnglish
    Pages (from-to)80-82
    Number of pages3
    JournalMaterials Science and Engineering: B
    Volume81
    Issue number1-3
    DOIs
    Publication statusPublished - 24 Apr 2001

    Keywords

    • Erbium
    • Free-electron laser
    • Photoluminescence
    • Silicon

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    Forcales, M., Bradley, I. V., Wells, J. P. R., & Gregorkiewicz, T. (2001). Mid-infrared induced quenching of photoluminescence in Si: Er. Materials Science and Engineering: B, 81(1-3), 80-82. https://doi.org/10.1016/S0921-5107(00)00741-8