Mid-infrared gas detection using optically immersed, room-temperature, semiconductor devices

J. G. Crowder; H. R. Hardaway; C. T. Elliott

doi:10.1088/0957-0233/13/6/308

Mid-infrared gas detection using optically immersed, room-temperature, semiconductor devices

J. G. Crowder, H. R. Hardaway, C. T. Elliott

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report the application of optically immersed, room-temperature InSb/InAlSb LED and photodiode devices to the ppm-level detection of nitrogen dioxide (NO₂) at a wavelength of 6 µm. The LED emission and the photodiode detectivity are both increased by the optical immersion, resulting in a power dissipation of only 0.25 mW in the LED. A White cell is used for high gas sensitivity and its relatively small numerical aperture can be conveniently matched to the field of view of the hyperspherically immersed devices.

Original language	English
Pages (from-to)	882-884
Number of pages	3
Journal	Measurement Science and Technology
Volume	13
Issue number	6
DOIs	https://doi.org/10.1088/0957-0233/13/6/308
Publication status	Published - 2002

Keywords

Gas detection
Gas sensing
InSb/InAlSb
Mid-infrared
Nitrogen dioxide
Optical immersion
Room-temperature LED
Room-temperature photodiode

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10.1088/0957-0233/13/6/308

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@article{d484dacb6fea417eac179ccf18889210,

title = "Mid-infrared gas detection using optically immersed, room-temperature, semiconductor devices",

abstract = "We report the application of optically immersed, room-temperature InSb/InAlSb LED and photodiode devices to the ppm-level detection of nitrogen dioxide (NO2) at a wavelength of 6 µm. The LED emission and the photodiode detectivity are both increased by the optical immersion, resulting in a power dissipation of only 0.25 mW in the LED. A White cell is used for high gas sensitivity and its relatively small numerical aperture can be conveniently matched to the field of view of the hyperspherically immersed devices.",

keywords = "Gas detection, Gas sensing, InSb/InAlSb, Mid-infrared, Nitrogen dioxide, Optical immersion, Room-temperature LED, Room-temperature photodiode",

author = "Crowder, {J. G.} and Hardaway, {H. R.} and Elliott, {C. T.}",

year = "2002",

doi = "10.1088/0957-0233/13/6/308",

language = "English",

volume = "13",

pages = "882--884",

journal = "Measurement Science and Technology",

issn = "0957-0233",

publisher = "IOP Publishing ",

number = "6",

}

TY - JOUR

T1 - Mid-infrared gas detection using optically immersed, room-temperature, semiconductor devices

AU - Crowder, J. G.

AU - Hardaway, H. R.

AU - Elliott, C. T.

PY - 2002

Y1 - 2002

N2 - We report the application of optically immersed, room-temperature InSb/InAlSb LED and photodiode devices to the ppm-level detection of nitrogen dioxide (NO2) at a wavelength of 6 µm. The LED emission and the photodiode detectivity are both increased by the optical immersion, resulting in a power dissipation of only 0.25 mW in the LED. A White cell is used for high gas sensitivity and its relatively small numerical aperture can be conveniently matched to the field of view of the hyperspherically immersed devices.

AB - We report the application of optically immersed, room-temperature InSb/InAlSb LED and photodiode devices to the ppm-level detection of nitrogen dioxide (NO2) at a wavelength of 6 µm. The LED emission and the photodiode detectivity are both increased by the optical immersion, resulting in a power dissipation of only 0.25 mW in the LED. A White cell is used for high gas sensitivity and its relatively small numerical aperture can be conveniently matched to the field of view of the hyperspherically immersed devices.

KW - Gas detection

KW - Gas sensing

KW - InSb/InAlSb

KW - Mid-infrared

KW - Nitrogen dioxide

KW - Optical immersion

KW - Room-temperature LED

KW - Room-temperature photodiode

UR - http://www.scopus.com/inward/record.url?scp=0036289789&partnerID=8YFLogxK

U2 - 10.1088/0957-0233/13/6/308

DO - 10.1088/0957-0233/13/6/308

M3 - Article

SN - 0957-0233

VL - 13

SP - 882

EP - 884

JO - Measurement Science and Technology

JF - Measurement Science and Technology

IS - 6

ER -

Mid-infrared gas detection using optically immersed, room-temperature, semiconductor devices

Abstract

Keywords

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