MIcrowave plasma chemical vapour deposition of high purity diamond films

M. G. Jubber, J. I B Wilson, Ian Drummond, P. John, David Milne

Research output: Contribution to journalArticle

Abstract

Diamond films have been deposited in a spherical (diameter 400 mm) ultrahigh vacuum chamber (base pressure less than 10-8 mbar) by microwave plasma decomposition of hydrogen-methane gas mixtures. A separately pumped loadlock prevents nitrogen contamination of the growth chamber when substrates up to 100 mm in diameter enter or leave. During deposition the plasma ball sits above the substrate and is remote from the chamber walls, which prevents contamination of the films by material etched from the chamber or substrate. Mass spectrometry and optical emission spectrometry continuously monitor the process during growth. Laser interferometry has been used to measure the in situ deposition rate. The diamond films have been characterized by a variety of techniques including scanning electron microscopy, X-ray photoelectron spectroscopy, electron energy loss spectroscopy, X-ray diffraction, laser ionization mass analysis, Raman scattering, IR spectroscopy and cathodoluminescence. These techniques show that the films contain only carbon and a low concentration of hydrogen, with no other impurities such as nitrogen or silicon.

Original languageEnglish
Pages (from-to)402-406
Number of pages5
JournalDiamond and Related Materials
Volume2
Issue number2 -4 pt 1
Publication statusPublished - 1 Jan 1993
Event3rd International Conference on the New Diamond Science and Technology (ICNDST-3) jointly with 3rd European Conference on Diamond, Diamond-like and Related Coatings (DF '92) - Heidelberg, Germany
Duration: 31 Aug 19924 Sep 1992

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    Jubber, M. G., Wilson, J. I. B., Drummond, I., John, P., & Milne, D. (1993). MIcrowave plasma chemical vapour deposition of high purity diamond films. Diamond and Related Materials, 2(2 -4 pt 1), 402-406.