Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ=1.5 μm

J M Smith, Gerald Stuart Buller, D Marshall, Alan Miller, C C Button

Research output: Contribution to journalArticle

Abstract

Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 1014 and 1016cm-3 reveal unexpectedly long carrier lifetimes, in excess of 2 µs. By fitting the appropriate rate equation parameters to our results, we establish that radiative recombination is the dominant relaxation process, and show that nonradiative recombination is much less pronounced than in similar quantum-well structures measured previously. © 2002 American Institute of Physics.

Original languageEnglish
Pages (from-to)1870-1872
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number11
DOIs
Publication statusPublished - 18 Mar 2002

Fingerprint

carrier lifetime
quantum wells
radiative recombination
photoluminescence
physics

Keywords

  • TIME-RESOLVED PHOTOLUMINESCENCE
  • 1.3-MU-M INGAASP
  • RECOMBINATION

Cite this

@article{7db628ee4065411c9a24b7ff1f3f0457,
title = "Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ=1.5 μm",
abstract = "Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 1014 and 1016cm-3 reveal unexpectedly long carrier lifetimes, in excess of 2 µs. By fitting the appropriate rate equation parameters to our results, we establish that radiative recombination is the dominant relaxation process, and show that nonradiative recombination is much less pronounced than in similar quantum-well structures measured previously. {\circledC} 2002 American Institute of Physics.",
keywords = "TIME-RESOLVED PHOTOLUMINESCENCE, 1.3-MU-M INGAASP, RECOMBINATION",
author = "Smith, {J M} and Buller, {Gerald Stuart} and D Marshall and Alan Miller and Button, {C C}",
year = "2002",
month = "3",
day = "18",
doi = "10.1063/1.1459490",
language = "English",
volume = "80",
pages = "1870--1872",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ=1.5 μm. / Smith, J M; Buller, Gerald Stuart; Marshall, D; Miller, Alan; Button, C C.

In: Applied Physics Letters, Vol. 80, No. 11, 18.03.2002, p. 1870-1872.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ=1.5 μm

AU - Smith, J M

AU - Buller, Gerald Stuart

AU - Marshall, D

AU - Miller, Alan

AU - Button, C C

PY - 2002/3/18

Y1 - 2002/3/18

N2 - Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 1014 and 1016cm-3 reveal unexpectedly long carrier lifetimes, in excess of 2 µs. By fitting the appropriate rate equation parameters to our results, we establish that radiative recombination is the dominant relaxation process, and show that nonradiative recombination is much less pronounced than in similar quantum-well structures measured previously. © 2002 American Institute of Physics.

AB - Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 1014 and 1016cm-3 reveal unexpectedly long carrier lifetimes, in excess of 2 µs. By fitting the appropriate rate equation parameters to our results, we establish that radiative recombination is the dominant relaxation process, and show that nonradiative recombination is much less pronounced than in similar quantum-well structures measured previously. © 2002 American Institute of Physics.

KW - TIME-RESOLVED PHOTOLUMINESCENCE

KW - 1.3-MU-M INGAASP

KW - RECOMBINATION

UR - http://www.scopus.com/inward/record.url?scp=79955992090&partnerID=8YFLogxK

U2 - 10.1063/1.1459490

DO - 10.1063/1.1459490

M3 - Article

VL - 80

SP - 1870

EP - 1872

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -