Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ=1.5 μm

J M Smith, Gerald Stuart Buller, D Marshall, Alan Miller, C C Button

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4 Citations (Scopus)
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Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 1014 and 1016cm-3 reveal unexpectedly long carrier lifetimes, in excess of 2 µs. By fitting the appropriate rate equation parameters to our results, we establish that radiative recombination is the dominant relaxation process, and show that nonradiative recombination is much less pronounced than in similar quantum-well structures measured previously. © 2002 American Institute of Physics.

Original languageEnglish
Pages (from-to)1870-1872
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 18 Mar 2002


  • 1.3-MU-M INGAASP

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