MeV ion-induced movement of lattice disorder in single crystalline silicon

P. Sen, J. Akhtar, Francis Michael Russell

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We provide experimental evidence for the transport of atomic disorder over large distances, in device grade single-crystalline silicon, following irradiation with 200 MeV silver ions. Pile-up of lattice defects or disorder is effected at predetermined locations, spatially separated from the irradiation site. These are revealed by STM scans with atomic resolution, of an intermediate region, spanning from irradiated to shadowed parts of the crystal surface. The experimental results are consistent with transport of disorder through breather-like intrinsic localised excitations.

Original languageEnglish
Pages (from-to)401-406
Number of pages6
JournalEurophysics Letters
Volume51
Issue number4
DOIs
Publication statusPublished - 11 Aug 2000

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