MeV ion-induced movement of lattice disorder in single crystalline silicon

P. Sen, J. Akhtar, Francis Michael Russell

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


We provide experimental evidence for the transport of atomic disorder over large distances, in device grade single-crystalline silicon, following irradiation with 200 MeV silver ions. Pile-up of lattice defects or disorder is effected at predetermined locations, spatially separated from the irradiation site. These are revealed by STM scans with atomic resolution, of an intermediate region, spanning from irradiated to shadowed parts of the crystal surface. The experimental results are consistent with transport of disorder through breather-like intrinsic localised excitations.

Original languageEnglish
Pages (from-to)401-406
Number of pages6
JournalEurophysics Letters
Issue number4
Publication statusPublished - 11 Aug 2000


Dive into the research topics of 'MeV ion-induced movement of lattice disorder in single crystalline silicon'. Together they form a unique fingerprint.

Cite this