Metastable group II sulphides grown by MBE: Surface morphology and crystal structure

K. A. Prior; C. Bradford; L. David; X. Tang; B. C. Cavenett

doi:10.1016/j.jcrysgro.2004.10.078

Metastable group II sulphides grown by MBE: Surface morphology and crystal structure

K. A. Prior, C. Bradford, L. David, X. Tang, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Many group II sulphides semiconductors have the rocksalt structure as their stable crystal structure. In the case of MgS and MnS, it has been demonstrated that these compounds can be grown in the metastable zinc-blende structure using a simple MBE growth procedure that can increase the thickness of these metastable layers to over 130 nm. In this paper, we review the growth method and features which arise during the growth of both MgS and MnS, namely the development parallel surface ridges and the loss of the zinc-blende crystal structure. © 2004 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	141-149
Number of pages	9
Journal	Journal of Crystal Growth
Volume	275
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.10.078
Publication status	Published - 15 Feb 2005

Keywords

A1. Low-dimensional structures
A3. Molecular beam epitaxy
B1. Sulfides
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2004.10.078

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title = "Metastable group II sulphides grown by MBE: Surface morphology and crystal structure",

abstract = "Many group II sulphides semiconductors have the rocksalt structure as their stable crystal structure. In the case of MgS and MnS, it has been demonstrated that these compounds can be grown in the metastable zinc-blende structure using a simple MBE growth procedure that can increase the thickness of these metastable layers to over 130 nm. In this paper, we review the growth method and features which arise during the growth of both MgS and MnS, namely the development parallel surface ridges and the loss of the zinc-blende crystal structure. {\textcopyright} 2004 Elsevier B.V. All rights reserved.",

keywords = "A1. Low-dimensional structures, A3. Molecular beam epitaxy, B1. Sulfides, B2. Semiconducting II-VI materials",

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T1 - Metastable group II sulphides grown by MBE

T2 - Surface morphology and crystal structure

AU - Prior, K. A.

AU - Bradford, C.

AU - David, L.

AU - Tang, X.

AU - Cavenett, B. C.

PY - 2005/2/15

Y1 - 2005/2/15

N2 - Many group II sulphides semiconductors have the rocksalt structure as their stable crystal structure. In the case of MgS and MnS, it has been demonstrated that these compounds can be grown in the metastable zinc-blende structure using a simple MBE growth procedure that can increase the thickness of these metastable layers to over 130 nm. In this paper, we review the growth method and features which arise during the growth of both MgS and MnS, namely the development parallel surface ridges and the loss of the zinc-blende crystal structure. © 2004 Elsevier B.V. All rights reserved.

AB - Many group II sulphides semiconductors have the rocksalt structure as their stable crystal structure. In the case of MgS and MnS, it has been demonstrated that these compounds can be grown in the metastable zinc-blende structure using a simple MBE growth procedure that can increase the thickness of these metastable layers to over 130 nm. In this paper, we review the growth method and features which arise during the growth of both MgS and MnS, namely the development parallel surface ridges and the loss of the zinc-blende crystal structure. © 2004 Elsevier B.V. All rights reserved.

KW - A1. Low-dimensional structures

KW - A3. Molecular beam epitaxy

KW - B1. Sulfides

KW - B2. Semiconducting II-VI materials

U2 - 10.1016/j.jcrysgro.2004.10.078

DO - 10.1016/j.jcrysgro.2004.10.078

M3 - Article

VL - 275

SP - 141

EP - 149

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Metastable group II sulphides grown by MBE: Surface morphology and crystal structure

Abstract

Keywords

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