Metallic proximity effect in ballistic graphene with resonant scatterers

M. Titov, P. M. Ostrovsky, I. V. Gornyi

Research output: Contribution to journalArticle

Abstract

We study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. We find that the density of states in the vicinity of the Dirac point acquires a strong position dependence due to both metallic proximity effect and impurity scattering. This effect may prevent uniform gating of weakly-doped samples. We also demonstrate that even a single-atom impurity may essentially alter electronic states at low-doping on distances of the order of the sample size from the impurity. © 2010 IOP Publishing Ltd.

Original languageEnglish
Article number034007
JournalSemiconductor Science and Technology
Volume25
Issue number3
DOIs
Publication statusPublished - 2010

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ballistics
graphene
impurities
scattering
electronics
atoms

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Titov, M. ; Ostrovsky, P. M. ; Gornyi, I. V. / Metallic proximity effect in ballistic graphene with resonant scatterers. In: Semiconductor Science and Technology. 2010 ; Vol. 25, No. 3.
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Metallic proximity effect in ballistic graphene with resonant scatterers. / Titov, M.; Ostrovsky, P. M.; Gornyi, I. V.

In: Semiconductor Science and Technology, Vol. 25, No. 3, 034007, 2010.

Research output: Contribution to journalArticle

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AU - Titov, M.

AU - Ostrovsky, P. M.

AU - Gornyi, I. V.

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M3 - Article

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