Megasonic enhanced wafer bumping process to enable high density electronics interconnection

Yingtao Tian, Jens Kaufmann, Changqing Liu, David A. Hutt, Bob Stevens, M. P Y Desmulliez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The assembly of hybrid pixel detectors requires direct interconnection between the readout chip and sensor chip. In such systems, the connection pitch size may be below 50 µm, such that the packing density (i.e. I/Os) may exceed 40,000/cm2. Electroplating is a promising approach to enable low-cost, high yield and ultra-fine pitch bumping. This paper reports an ultra-fine pitch electroplating bumping process which can be enhanced by incorporating megasonic agitation. Acoustic agitation at above 1 MHz frequencies is able to significantly reduce the diffusion boundary layer of electroplating to a thickness less than 1 µm, as compared to tens of microns under conventional plating conditions. The initial experimental results presented here demonstrate an enhanced polycrystalline growth other than dendrite deposition under a very high current density through megasonic agitation deposition, thereby allowing a significant acceleration of the electrodeposition process. For the electroplating wafer bumping process, megasonic agitation can also accelerate the bump growth rate under the same current density, due to the increase of cathodic current efficiency. Also, megasonic agitation appears not to damage the photoresist pattern, which is often the case when ultrasonic agitation is used. ©2008 IEEE.

Original languageEnglish
Title of host publicationProceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC
Pages725-729
Number of pages5
DOIs
Publication statusPublished - 2008
Event2008 2nd Electronics Systemintegration Technology Conference - Greenwich, United Kingdom
Duration: 1 Sep 20084 Sep 2008

Conference

Conference2008 2nd Electronics Systemintegration Technology Conference
Abbreviated titleESTC
CountryUnited Kingdom
CityGreenwich
Period1/09/084/09/08

Fingerprint

agitation
electroplating
wafers
electronics
ultrasonic agitation
chips
current density
packing density
dendrites
plating
photoresists
electrodeposition
high current
readout
boundary layers
assembly
pixels
damage
acoustics
sensors

Cite this

Tian, Y., Kaufmann, J., Liu, C., Hutt, D. A., Stevens, B., & Desmulliez, M. P. Y. (2008). Megasonic enhanced wafer bumping process to enable high density electronics interconnection. In Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC (pp. 725-729) https://doi.org/10.1109/ESTC.2008.4684440
Tian, Yingtao ; Kaufmann, Jens ; Liu, Changqing ; Hutt, David A. ; Stevens, Bob ; Desmulliez, M. P Y. / Megasonic enhanced wafer bumping process to enable high density electronics interconnection. Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC. 2008. pp. 725-729
@inproceedings{ee616893941242da8853817cd89dfb19,
title = "Megasonic enhanced wafer bumping process to enable high density electronics interconnection",
abstract = "The assembly of hybrid pixel detectors requires direct interconnection between the readout chip and sensor chip. In such systems, the connection pitch size may be below 50 µm, such that the packing density (i.e. I/Os) may exceed 40,000/cm2. Electroplating is a promising approach to enable low-cost, high yield and ultra-fine pitch bumping. This paper reports an ultra-fine pitch electroplating bumping process which can be enhanced by incorporating megasonic agitation. Acoustic agitation at above 1 MHz frequencies is able to significantly reduce the diffusion boundary layer of electroplating to a thickness less than 1 µm, as compared to tens of microns under conventional plating conditions. The initial experimental results presented here demonstrate an enhanced polycrystalline growth other than dendrite deposition under a very high current density through megasonic agitation deposition, thereby allowing a significant acceleration of the electrodeposition process. For the electroplating wafer bumping process, megasonic agitation can also accelerate the bump growth rate under the same current density, due to the increase of cathodic current efficiency. Also, megasonic agitation appears not to damage the photoresist pattern, which is often the case when ultrasonic agitation is used. {\circledC}2008 IEEE.",
author = "Yingtao Tian and Jens Kaufmann and Changqing Liu and Hutt, {David A.} and Bob Stevens and Desmulliez, {M. P Y}",
year = "2008",
doi = "10.1109/ESTC.2008.4684440",
language = "English",
isbn = "9781424428144",
pages = "725--729",
booktitle = "Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC",

}

Tian, Y, Kaufmann, J, Liu, C, Hutt, DA, Stevens, B & Desmulliez, MPY 2008, Megasonic enhanced wafer bumping process to enable high density electronics interconnection. in Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC. pp. 725-729, 2008 2nd Electronics Systemintegration Technology Conference, Greenwich, United Kingdom, 1/09/08. https://doi.org/10.1109/ESTC.2008.4684440

Megasonic enhanced wafer bumping process to enable high density electronics interconnection. / Tian, Yingtao; Kaufmann, Jens; Liu, Changqing; Hutt, David A.; Stevens, Bob; Desmulliez, M. P Y.

Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC. 2008. p. 725-729.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Megasonic enhanced wafer bumping process to enable high density electronics interconnection

AU - Tian, Yingtao

AU - Kaufmann, Jens

AU - Liu, Changqing

AU - Hutt, David A.

AU - Stevens, Bob

AU - Desmulliez, M. P Y

PY - 2008

Y1 - 2008

N2 - The assembly of hybrid pixel detectors requires direct interconnection between the readout chip and sensor chip. In such systems, the connection pitch size may be below 50 µm, such that the packing density (i.e. I/Os) may exceed 40,000/cm2. Electroplating is a promising approach to enable low-cost, high yield and ultra-fine pitch bumping. This paper reports an ultra-fine pitch electroplating bumping process which can be enhanced by incorporating megasonic agitation. Acoustic agitation at above 1 MHz frequencies is able to significantly reduce the diffusion boundary layer of electroplating to a thickness less than 1 µm, as compared to tens of microns under conventional plating conditions. The initial experimental results presented here demonstrate an enhanced polycrystalline growth other than dendrite deposition under a very high current density through megasonic agitation deposition, thereby allowing a significant acceleration of the electrodeposition process. For the electroplating wafer bumping process, megasonic agitation can also accelerate the bump growth rate under the same current density, due to the increase of cathodic current efficiency. Also, megasonic agitation appears not to damage the photoresist pattern, which is often the case when ultrasonic agitation is used. ©2008 IEEE.

AB - The assembly of hybrid pixel detectors requires direct interconnection between the readout chip and sensor chip. In such systems, the connection pitch size may be below 50 µm, such that the packing density (i.e. I/Os) may exceed 40,000/cm2. Electroplating is a promising approach to enable low-cost, high yield and ultra-fine pitch bumping. This paper reports an ultra-fine pitch electroplating bumping process which can be enhanced by incorporating megasonic agitation. Acoustic agitation at above 1 MHz frequencies is able to significantly reduce the diffusion boundary layer of electroplating to a thickness less than 1 µm, as compared to tens of microns under conventional plating conditions. The initial experimental results presented here demonstrate an enhanced polycrystalline growth other than dendrite deposition under a very high current density through megasonic agitation deposition, thereby allowing a significant acceleration of the electrodeposition process. For the electroplating wafer bumping process, megasonic agitation can also accelerate the bump growth rate under the same current density, due to the increase of cathodic current efficiency. Also, megasonic agitation appears not to damage the photoresist pattern, which is often the case when ultrasonic agitation is used. ©2008 IEEE.

UR - http://www.scopus.com/inward/record.url?scp=58149098531&partnerID=8YFLogxK

U2 - 10.1109/ESTC.2008.4684440

DO - 10.1109/ESTC.2008.4684440

M3 - Conference contribution

SN - 9781424428144

SP - 725

EP - 729

BT - Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC

ER -

Tian Y, Kaufmann J, Liu C, Hutt DA, Stevens B, Desmulliez MPY. Megasonic enhanced wafer bumping process to enable high density electronics interconnection. In Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC. 2008. p. 725-729 https://doi.org/10.1109/ESTC.2008.4684440