Mechanisms of strain induced roughening and dislocation multiplication in Si[x]Ge[1-x] thin films

David Jesson, K M Chen, S J Pennycook, T Thundat, R J Warmack

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1040-1048
Number of pages	9
Journal	Journal of Electronic Materials
Volume	26
Publication status	Published - 1997

Cite this

@article{380eab1f7f92497fb752b81647466e9f,

title = "Mechanisms of strain induced roughening and dislocation multiplication in Si[x]Ge[1-x] thin films",

author = "David Jesson and Chen, \{K M\} and Pennycook, \{S J\} and T Thundat and Warmack, \{R J\}",

year = "1997",

language = "English",

volume = "26",

pages = "1040--1048",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

}