Original language | English |
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Pages (from-to) | 1040-1048 |
Number of pages | 9 |
Journal | Journal of Electronic Materials |
Volume | 26 |
Publication status | Published - 1997 |
Mechanisms of strain induced roughening and dislocation multiplication in Si[x]Ge[1-x] thin films
David Jesson, K M Chen, S J Pennycook, T Thundat, R J Warmack
Research output: Contribution to journal › Article › peer-review