Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers

M. Pozzi; A. J. Harris; J. S. Burdess; K. K. Lee; R. Cheung; G. J. Phelps; N. G. Wright; C. A. Zorman; M. Mehregany

Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers

M. Pozzi^*
, A. J. Harris
, J. S. Burdess
, K. K. Lee
, R. Cheung
, G. J. Phelps
, N. G. Wright
, C. A. Zorman
, M. Mehregany

^*Corresponding author for this work

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon in Micro Electro-Mechanical Systems (MEMS) devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 °C. The active material is a cubic poly SiC layer deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by Laser Doppler Velocimetry and used to derive the Young's modulus and residual stress in the heteroepitaxial layer (330±45 GPa and 200±20MPa, respectively). The temperature coefficient of Young's modulus is found to be -53±2 ppm/K in the range RT to ∼300 °C, whilst an analytical expression is given for the temperature dependency of the Young's modulus between RT and 500 °C.

Original language	English
Title of host publication	Technical Proceedings of the 2007 Nanotechnology Conference and Trade Show, Nanotech 2007
Pages	65-68
Number of pages	4
Volume	4
Publication status	Published - 2007
Event	2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States Duration: 20 May 2007 → 24 May 2007

Conference

Conference	2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
Country/Territory	United States
City	Santa Clara, CA
Period	20/05/07 → 24/05/07

Keywords

Harsh environment
MEMS
Silicon-carbide
Temperature coefficient of Young's modulus

ASJC Scopus subject areas

Mechanical Engineering

Access to Document

https://briefs.techconnect.org/wp-content/volumes/Nanotech2007v4/pdf/930.pdf

Cite this

Pozzi, M., Harris, A. J., Burdess, J. S., Lee, K. K., Cheung, R., Phelps, G. J., Wright, N. G., Zorman, C. A., & Mehregany, M. (2007). Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers. In Technical Proceedings of the 2007 Nanotechnology Conference and Trade Show, Nanotech 2007 (Vol. 4, pp. 65-68) https://briefs.techconnect.org/wp-content/volumes/Nanotech2007v4/pdf/930.pdf

@inproceedings{529c327245ae4f8f9d204ca610d6ffbc,

title = "Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers",

abstract = "Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon in Micro Electro-Mechanical Systems (MEMS) devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 °C. The active material is a cubic poly SiC layer deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by Laser Doppler Velocimetry and used to derive the Young's modulus and residual stress in the heteroepitaxial layer (330±45 GPa and 200±20MPa, respectively). The temperature coefficient of Young's modulus is found to be -53±2 ppm/K in the range RT to ∼300 °C, whilst an analytical expression is given for the temperature dependency of the Young's modulus between RT and 500 °C.",

keywords = "Harsh environment, MEMS, Silicon-carbide, Temperature coefficient of Young's modulus",

author = "M. Pozzi and Harris, \{A. J.\} and Burdess, \{J. S.\} and Lee, \{K. K.\} and R. Cheung and Phelps, \{G. J.\} and Wright, \{N. G.\} and Zorman, \{C. A.\} and M. Mehregany",

year = "2007",

language = "English",

isbn = "9781420063424",

volume = "4",

pages = "65--68",

booktitle = "Technical Proceedings of the 2007 Nanotechnology Conference and Trade Show, Nanotech 2007",

note = "2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 ; Conference date: 20-05-2007 Through 24-05-2007",

}

Pozzi, M, Harris, AJ, Burdess, JS, Lee, KK, Cheung, R, Phelps, GJ, Wright, NG, Zorman, CA & Mehregany, M 2007, Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers. in Technical Proceedings of the 2007 Nanotechnology Conference and Trade Show, Nanotech 2007. vol. 4, pp. 65-68, 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Santa Clara, CA, United States, 20/05/07. <https://briefs.techconnect.org/wp-content/volumes/Nanotech2007v4/pdf/930.pdf>

TY - GEN

T1 - Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers

AU - Pozzi, M.

AU - Harris, A. J.

AU - Burdess, J. S.

AU - Lee, K. K.

AU - Cheung, R.

AU - Phelps, G. J.

AU - Wright, N. G.

AU - Zorman, C. A.

AU - Mehregany, M.

PY - 2007

Y1 - 2007

N2 - Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon in Micro Electro-Mechanical Systems (MEMS) devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 °C. The active material is a cubic poly SiC layer deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by Laser Doppler Velocimetry and used to derive the Young's modulus and residual stress in the heteroepitaxial layer (330±45 GPa and 200±20MPa, respectively). The temperature coefficient of Young's modulus is found to be -53±2 ppm/K in the range RT to ∼300 °C, whilst an analytical expression is given for the temperature dependency of the Young's modulus between RT and 500 °C.

AB - Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon in Micro Electro-Mechanical Systems (MEMS) devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 °C. The active material is a cubic poly SiC layer deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by Laser Doppler Velocimetry and used to derive the Young's modulus and residual stress in the heteroepitaxial layer (330±45 GPa and 200±20MPa, respectively). The temperature coefficient of Young's modulus is found to be -53±2 ppm/K in the range RT to ∼300 °C, whilst an analytical expression is given for the temperature dependency of the Young's modulus between RT and 500 °C.

KW - Harsh environment

KW - MEMS

KW - Silicon-carbide

KW - Temperature coefficient of Young's modulus

UR - https://www.scopus.com/pages/publications/34547974975

M3 - Conference contribution

AN - SCOPUS:34547974975

SN - 9781420063424

SN - 9781420063769

VL - 4

SP - 65

EP - 68

BT - Technical Proceedings of the 2007 Nanotechnology Conference and Trade Show, Nanotech 2007

T2 - 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007

Y2 - 20 May 2007 through 24 May 2007

ER -

Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers

Abstract

Conference

Keywords

ASJC Scopus subject areas

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