Measurements are reported on the frequency dependence of transphasor gain using an indium antimonide etalon. Experimental Cd and a theoretical model indicate that the product of bandwidth and low frequency gain is approximately constant and that this constant is determined by the recombination rate CO free carriers. The results should be generally applicable to devices of this type.
|Number of pages||7|
|Journal||IEEE Journal of Quantum Electronics|
|Publication status||Published - Sep 1985|