MBE growth of ZnS and ZnCdS layers on GaP

S. A. Telfer; Christian Morhain; B. Urbaszek; C. O'Donnell; P. Tomasini; A. Balocchi; K. A. Prior; B. C. Cavenett

doi:10.1016/S0022-0248(00)00080-4

MBE growth of ZnS and ZnCdS layers on GaP

S. A. Telfer
, Christian Morhain
, B. Urbaszek
, C. O'Donnell
, P. Tomasini
, A. Balocchi
, K. A. Prior
, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

Original language	English
Pages (from-to)	197-201
Number of pages	5
Journal	Journal of Crystal Growth
Volume	214
DOIs	https://doi.org/10.1016/S0022-0248(00)00080-4
Publication status	Published - 2 Jun 2000
Event	The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1 Nov 1999 → 5 Nov 1999

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title = "MBE growth of ZnS and ZnCdS layers on GaP",

abstract = "The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.",

author = "Telfer, \{S. A.\} and Christian Morhain and B. Urbaszek and C. O'Donnell and P. Tomasini and A. Balocchi and Prior, \{K. A.\} and Cavenett, \{B. C.\}",

year = "2000",

month = jun,

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doi = "10.1016/S0022-0248(00)00080-4",

language = "English",

volume = "214",

pages = "197--201",

journal = "Journal of Crystal Growth",

publisher = "Elsevier B.V.",

note = "The 9th International Conference on II-VI Compounds ; Conference date: 01-11-1999 Through 05-11-1999",

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TY - JOUR

T1 - MBE growth of ZnS and ZnCdS layers on GaP

AU - Telfer, S. A.

AU - Morhain, Christian

AU - Urbaszek, B.

AU - O'Donnell, C.

AU - Tomasini, P.

AU - Balocchi, A.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 2000/6/2

Y1 - 2000/6/2

N2 - The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

AB - The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

UR - https://www.scopus.com/pages/publications/0033701532

U2 - 10.1016/S0022-0248(00)00080-4

DO - 10.1016/S0022-0248(00)00080-4

M3 - Article

VL - 214

SP - 197

EP - 201

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - The 9th International Conference on II-VI Compounds

Y2 - 1 November 1999 through 5 November 1999

ER -

MBE growth of ZnS and ZnCdS layers on GaP

Abstract

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