The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 2 Jun 2000|
|Event||The 9th International Conference on II-VI Compounds - Kyoto, Jpn|
Duration: 1 Nov 1999 → 5 Nov 1999