MBE growth of ZnS and ZnCdS layers on GaP

S. A. Telfer, Christian Morhain, B. Urbaszek, C. O'Donnell, P. Tomasini, A. Balocchi, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2 Jun 2000
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1 Nov 19995 Nov 1999

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molecular beam epitaxy
oxides
x rays

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Telfer, S. A., Morhain, C., Urbaszek, B., O'Donnell, C., Tomasini, P., Balocchi, A., ... Cavenett, B. C. (2000). MBE growth of ZnS and ZnCdS layers on GaP. Journal of Crystal Growth, 214, 197-201. https://doi.org/10.1016/S0022-0248(00)00080-4
Telfer, S. A. ; Morhain, Christian ; Urbaszek, B. ; O'Donnell, C. ; Tomasini, P. ; Balocchi, A. ; Prior, K. A. ; Cavenett, B. C. / MBE growth of ZnS and ZnCdS layers on GaP. In: Journal of Crystal Growth. 2000 ; Vol. 214. pp. 197-201.
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Telfer, SA, Morhain, C, Urbaszek, B, O'Donnell, C, Tomasini, P, Balocchi, A, Prior, KA & Cavenett, BC 2000, 'MBE growth of ZnS and ZnCdS layers on GaP', Journal of Crystal Growth, vol. 214, pp. 197-201. https://doi.org/10.1016/S0022-0248(00)00080-4

MBE growth of ZnS and ZnCdS layers on GaP. / Telfer, S. A.; Morhain, Christian; Urbaszek, B.; O'Donnell, C.; Tomasini, P.; Balocchi, A.; Prior, K. A.; Cavenett, B. C.

In: Journal of Crystal Growth, Vol. 214, 02.06.2000, p. 197-201.

Research output: Contribution to journalArticle

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T1 - MBE growth of ZnS and ZnCdS layers on GaP

AU - Telfer, S. A.

AU - Morhain, Christian

AU - Urbaszek, B.

AU - O'Donnell, C.

AU - Tomasini, P.

AU - Balocchi, A.

AU - Prior, K. A.

AU - Cavenett, B. C.

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AB - The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

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Telfer SA, Morhain C, Urbaszek B, O'Donnell C, Tomasini P, Balocchi A et al. MBE growth of ZnS and ZnCdS layers on GaP. Journal of Crystal Growth. 2000 Jun 2;214:197-201. https://doi.org/10.1016/S0022-0248(00)00080-4