MBE growth of ZnS and ZnCdS layers on GaP

S. A. Telfer, Christian Morhain, B. Urbaszek, C. O'Donnell, P. Tomasini, A. Balocchi, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2 Jun 2000
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1 Nov 19995 Nov 1999

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    Telfer, S. A., Morhain, C., Urbaszek, B., O'Donnell, C., Tomasini, P., Balocchi, A., Prior, K. A., & Cavenett, B. C. (2000). MBE growth of ZnS and ZnCdS layers on GaP. Journal of Crystal Growth, 214, 197-201. https://doi.org/10.1016/S0022-0248(00)00080-4