MBE growth of ZnS and ZnCdS layers on GaP

S. A. Telfer; Christian Morhain; B. Urbaszek; C. O'Donnell; P. Tomasini; A. Balocchi; K. A. Prior; B. C. Cavenett

doi:10.1016/S0022-0248(00)00080-4

MBE growth of ZnS and ZnCdS layers on GaP

S. A. Telfer, Christian Morhain, B. Urbaszek, C. O'Donnell, P. Tomasini, A. Balocchi, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

Original language	English
Pages (from-to)	197-201
Number of pages	5
Journal	Journal of Crystal Growth
Volume	214
DOIs	https://doi.org/10.1016/S0022-0248(00)00080-4
Publication status	Published - 2 Jun 2000
Event	The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1 Nov 1999 → 5 Nov 1999

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title = "MBE growth of ZnS and ZnCdS layers on GaP",

abstract = "The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.",

author = "Telfer, {S. A.} and Christian Morhain and B. Urbaszek and C. O'Donnell and P. Tomasini and A. Balocchi and Prior, {K. A.} and Cavenett, {B. C.}",

year = "2000",

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doi = "10.1016/S0022-0248(00)00080-4",

language = "English",

volume = "214",

pages = "197--201",

journal = "Journal of Crystal Growth",

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note = "The 9th International Conference on II-VI Compounds ; Conference date: 01-11-1999 Through 05-11-1999",

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TY - JOUR

T1 - MBE growth of ZnS and ZnCdS layers on GaP

AU - Telfer, S. A.

AU - Morhain, Christian

AU - Urbaszek, B.

AU - O'Donnell, C.

AU - Tomasini, P.

AU - Balocchi, A.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 2000/6/2

Y1 - 2000/6/2

N2 - The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

AB - The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

UR - http://www.scopus.com/inward/record.url?scp=0033701532&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00080-4

DO - 10.1016/S0022-0248(00)00080-4

M3 - Article

SN - 0022-0248

VL - 214

SP - 197

EP - 201

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - The 9th International Conference on II-VI Compounds

Y2 - 1 November 1999 through 5 November 1999

ER -

MBE growth of ZnS and ZnCdS layers on GaP

Abstract

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