MBE growth of ZnS and ZnCdS layers on GaP

S. A. Telfer, Christian Morhain, B. Urbaszek, C. O'Donnell, P. Tomasini, A. Balocchi, K. A. Prior, B. C. Cavenett

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12 Citations (Scopus)


The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2 × 4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.

Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 2 Jun 2000
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1 Nov 19995 Nov 1999


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