MBE growth of CdTe and Cd1-xMnxTe layers and multilayers on InSb substrates

D. E. Ashenford; B. Lunn; J. J. Davies; J. H C Hogg; J. E. Nicholls; C. G. Scott; D. Shaw; H. H. Sutherland; C. P. Hilton; T. J. Gregory; D. Johnston; B. C. Cavenett; G. R. Johnson; M. Haines

MBE growth of CdTe and Cd_1-xMn_xTe layers and multilayers on InSb substrates

D. E. Ashenford, B. Lunn, J. J. Davies, J. H C Hogg, J. E. Nicholls, C. G. Scott, D. Shaw, H. H. Sutherland, C. P. Hilton, T. J. Gregory, D. Johnston, B. C. Cavenett, G. R. Johnson, M. Haines

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Single and multiple layers of CdTe and CdMnTe, including MQW structures with well and barrier thicknesses down to 20 Å, have been grown by MBE on (001) InSb. The broadening of the excitonic photoluminescence lines in single layers is consistent with current theories of statistical alloy fluctuations. For multiple thin layer structures the PL spectra show quantum confinement effects. The DCXRD rocking curve data show that both the single and multiple layers are of high structural quality. © 1989.

Original language	English
Pages (from-to)	557-561
Number of pages	5
Journal	Journal of Crystal Growth
Volume	95
Issue number	1-4
Publication status	Published - 2 Feb 1989

Cite this

@article{8f3a10e15b21427983601785daf4ecb8,

title = "MBE growth of CdTe and Cd1-xMnxTe layers and multilayers on InSb substrates",

abstract = "Single and multiple layers of CdTe and CdMnTe, including MQW structures with well and barrier thicknesses down to 20 {\AA}, have been grown by MBE on (001) InSb. The broadening of the excitonic photoluminescence lines in single layers is consistent with current theories of statistical alloy fluctuations. For multiple thin layer structures the PL spectra show quantum confinement effects. The DCXRD rocking curve data show that both the single and multiple layers are of high structural quality. {\textcopyright} 1989.",

author = "Ashenford, {D. E.} and B. Lunn and Davies, {J. J.} and Hogg, {J. H C} and Nicholls, {J. E.} and Scott, {C. G.} and D. Shaw and Sutherland, {H. H.} and Hilton, {C. P.} and Gregory, {T. J.} and D. Johnston and Cavenett, {B. C.} and Johnson, {G. R.} and M. Haines",

year = "1989",

month = feb,

day = "2",

language = "English",

volume = "95",

pages = "557--561",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - MBE growth of CdTe and Cd1-xMnxTe layers and multilayers on InSb substrates

AU - Ashenford, D. E.

AU - Lunn, B.

AU - Davies, J. J.

AU - Hogg, J. H C

AU - Nicholls, J. E.

AU - Scott, C. G.

AU - Shaw, D.

AU - Sutherland, H. H.

AU - Hilton, C. P.

AU - Gregory, T. J.

AU - Johnston, D.

AU - Cavenett, B. C.

AU - Johnson, G. R.

AU - Haines, M.

PY - 1989/2/2

Y1 - 1989/2/2

N2 - Single and multiple layers of CdTe and CdMnTe, including MQW structures with well and barrier thicknesses down to 20 Å, have been grown by MBE on (001) InSb. The broadening of the excitonic photoluminescence lines in single layers is consistent with current theories of statistical alloy fluctuations. For multiple thin layer structures the PL spectra show quantum confinement effects. The DCXRD rocking curve data show that both the single and multiple layers are of high structural quality. © 1989.

AB - Single and multiple layers of CdTe and CdMnTe, including MQW structures with well and barrier thicknesses down to 20 Å, have been grown by MBE on (001) InSb. The broadening of the excitonic photoluminescence lines in single layers is consistent with current theories of statistical alloy fluctuations. For multiple thin layer structures the PL spectra show quantum confinement effects. The DCXRD rocking curve data show that both the single and multiple layers are of high structural quality. © 1989.

M3 - Article

SN - 0022-0248

VL - 95

SP - 557

EP - 561

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

MBE growth of CdTe and Cd1-xMnxTe layers and multilayers on InSb substrates

Abstract

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MBE growth of CdTe and Cd_1-xMn_xTe layers and multilayers on InSb substrates