MBE growth of CdTe and Cd1-xMnxTe layers and multilayers on InSb substrates

D. E. Ashenford, B. Lunn, J. J. Davies, J. H C Hogg, J. E. Nicholls, C. G. Scott, D. Shaw, H. H. Sutherland, C. P. Hilton, T. J. Gregory, D. Johnston, B. C. Cavenett, G. R. Johnson, M. Haines

Research output: Contribution to journalArticle

Abstract

Single and multiple layers of CdTe and CdMnTe, including MQW structures with well and barrier thicknesses down to 20 Å, have been grown by MBE on (001) InSb. The broadening of the excitonic photoluminescence lines in single layers is consistent with current theories of statistical alloy fluctuations. For multiple thin layer structures the PL spectra show quantum confinement effects. The DCXRD rocking curve data show that both the single and multiple layers are of high structural quality. © 1989.

Original languageEnglish
Pages (from-to)557-561
Number of pages5
JournalJournal of Crystal Growth
Volume95
Issue number1-4
Publication statusPublished - 2 Feb 1989

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    Ashenford, D. E., Lunn, B., Davies, J. J., Hogg, J. H. C., Nicholls, J. E., Scott, C. G., Shaw, D., Sutherland, H. H., Hilton, C. P., Gregory, T. J., Johnston, D., Cavenett, B. C., Johnson, G. R., & Haines, M. (1989). MBE growth of CdTe and Cd1-xMnxTe layers and multilayers on InSb substrates. Journal of Crystal Growth, 95(1-4), 557-561.