Epitaxial lift-off (ELO) is a post-growth process that allows the active part of a semiconductor structure to be transferred from its growth substrate to a new one. This is a well established technique for IIIV semiconductors, and has previously been demonstrated for ZnSe-based alloys grown on GaAs using a metastable MgS sacrificial layer, taking advantage of the huge difference in etch rates of MgS and ZnSe. We report here the first successful extension of this process to IIVI layers grown on InP by using a MgSe sacrificial layer. By using the correct etching conditions, MgSe has been found to work effectively as a sacrificial layer. 5?X?5?mm2 square pieces of material can be lifted and deposited on glass substrates without any deterioration in the structural or optical properties; as confirmed by optical microscopy and photoluminescence (PL) measurements.
|Number of pages||4|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - Aug 2012|