MBE growth and design of II-VI heterostructures for epitaxial lift-off

Ian A. Davidson; Richard T. Moug; Erin C. Vallance; Maria C. Tamargo; Kevin Alan Prior

doi:10.1002/pssa.201100584

MBE growth and design of II-VI heterostructures for epitaxial lift-off

Ian A. Davidson, Richard T. Moug, Erin C. Vallance, Maria C. Tamargo, Kevin Alan Prior

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Epitaxial lift-off (ELO) is a post-growth process that allows the active part of a semiconductor structure to be transferred from its growth substrate to a new one. This is a well established technique for IIIV semiconductors, and has previously been demonstrated for ZnSe-based alloys grown on GaAs using a metastable MgS sacrificial layer, taking advantage of the huge difference in etch rates of MgS and ZnSe. We report here the first successful extension of this process to IIVI layers grown on InP by using a MgSe sacrificial layer. By using the correct etching conditions, MgSe has been found to work effectively as a sacrificial layer. 5?X?5?mm2 square pieces of material can be lifted and deposited on glass substrates without any deterioration in the structural or optical properties; as confirmed by optical microscopy and photoluminescence (PL) measurements.

Original language	English
Pages (from-to)	1428-1431
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	209
Issue number	8
DOIs	https://doi.org/10.1002/pssa.201100584
Publication status	Published - Aug 2012

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@article{f88955b50d4b46e5bba3357e2f98410a,

title = "MBE growth and design of II-VI heterostructures for epitaxial lift-off",

abstract = "Epitaxial lift-off (ELO) is a post-growth process that allows the active part of a semiconductor structure to be transferred from its growth substrate to a new one. This is a well established technique for IIIV semiconductors, and has previously been demonstrated for ZnSe-based alloys grown on GaAs using a metastable MgS sacrificial layer, taking advantage of the huge difference in etch rates of MgS and ZnSe. We report here the first successful extension of this process to IIVI layers grown on InP by using a MgSe sacrificial layer. By using the correct etching conditions, MgSe has been found to work effectively as a sacrificial layer. 5?X?5?mm2 square pieces of material can be lifted and deposited on glass substrates without any deterioration in the structural or optical properties; as confirmed by optical microscopy and photoluminescence (PL) measurements.",

author = "Davidson, {Ian A.} and Moug, {Richard T.} and Vallance, {Erin C.} and Tamargo, {Maria C.} and Prior, {Kevin Alan}",

year = "2012",

month = aug,

doi = "10.1002/pssa.201100584",

language = "English",

volume = "209",

pages = "1428--1431",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "8",

}

TY - JOUR

T1 - MBE growth and design of II-VI heterostructures for epitaxial lift-off

AU - Davidson, Ian A.

AU - Moug, Richard T.

AU - Vallance, Erin C.

AU - Tamargo, Maria C.

AU - Prior, Kevin Alan

PY - 2012/8

Y1 - 2012/8

N2 - Epitaxial lift-off (ELO) is a post-growth process that allows the active part of a semiconductor structure to be transferred from its growth substrate to a new one. This is a well established technique for IIIV semiconductors, and has previously been demonstrated for ZnSe-based alloys grown on GaAs using a metastable MgS sacrificial layer, taking advantage of the huge difference in etch rates of MgS and ZnSe. We report here the first successful extension of this process to IIVI layers grown on InP by using a MgSe sacrificial layer. By using the correct etching conditions, MgSe has been found to work effectively as a sacrificial layer. 5?X?5?mm2 square pieces of material can be lifted and deposited on glass substrates without any deterioration in the structural or optical properties; as confirmed by optical microscopy and photoluminescence (PL) measurements.

AB - Epitaxial lift-off (ELO) is a post-growth process that allows the active part of a semiconductor structure to be transferred from its growth substrate to a new one. This is a well established technique for IIIV semiconductors, and has previously been demonstrated for ZnSe-based alloys grown on GaAs using a metastable MgS sacrificial layer, taking advantage of the huge difference in etch rates of MgS and ZnSe. We report here the first successful extension of this process to IIVI layers grown on InP by using a MgSe sacrificial layer. By using the correct etching conditions, MgSe has been found to work effectively as a sacrificial layer. 5?X?5?mm2 square pieces of material can be lifted and deposited on glass substrates without any deterioration in the structural or optical properties; as confirmed by optical microscopy and photoluminescence (PL) measurements.

U2 - 10.1002/pssa.201100584

DO - 10.1002/pssa.201100584

M3 - Article

SN - 1862-6300

VL - 209

SP - 1428

EP - 1431

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 8

ER -

MBE growth and design of II-VI heterostructures for epitaxial lift-off

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