Maximum operating junction temperature of PT and NPT IGBTs

K. Sheng, B. W. Williams, S. J. Finney

Research output: Contribution to journalArticle

Abstract

The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.

Original languageEnglish
Pages (from-to)2276-2277
Number of pages2
JournalElectronics Letters
Volume34
Issue number23
Publication statusPublished - 12 Nov 1998

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Sheng, K., Williams, B. W., & Finney, S. J. (1998). Maximum operating junction temperature of PT and NPT IGBTs. Electronics Letters, 34(23), 2276-2277.
Sheng, K. ; Williams, B. W. ; Finney, S. J. / Maximum operating junction temperature of PT and NPT IGBTs. In: Electronics Letters. 1998 ; Vol. 34, No. 23. pp. 2276-2277.
@article{c6986d6d0a3141f3802be5213cf33deb,
title = "Maximum operating junction temperature of PT and NPT IGBTs",
abstract = "The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.",
author = "K. Sheng and Williams, {B. W.} and Finney, {S. J.}",
year = "1998",
month = "11",
day = "12",
language = "English",
volume = "34",
pages = "2276--2277",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "23",

}

Sheng, K, Williams, BW & Finney, SJ 1998, 'Maximum operating junction temperature of PT and NPT IGBTs', Electronics Letters, vol. 34, no. 23, pp. 2276-2277.

Maximum operating junction temperature of PT and NPT IGBTs. / Sheng, K.; Williams, B. W.; Finney, S. J.

In: Electronics Letters, Vol. 34, No. 23, 12.11.1998, p. 2276-2277.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Maximum operating junction temperature of PT and NPT IGBTs

AU - Sheng, K.

AU - Williams, B. W.

AU - Finney, S. J.

PY - 1998/11/12

Y1 - 1998/11/12

N2 - The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.

AB - The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.

UR - http://www.scopus.com/inward/record.url?scp=0032202798&partnerID=8YFLogxK

M3 - Article

VL - 34

SP - 2276

EP - 2277

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 23

ER -

Sheng K, Williams BW, Finney SJ. Maximum operating junction temperature of PT and NPT IGBTs. Electronics Letters. 1998 Nov 12;34(23):2276-2277.