Abstract
The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.
| Original language | English |
|---|---|
| Pages (from-to) | 2276-2277 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 34 |
| Issue number | 23 |
| Publication status | Published - 12 Nov 1998 |