Maximum operating junction temperature of PT and NPT IGBTs

K. Sheng; B. W. Williams; S. J. Finney

Maximum operating junction temperature of PT and NPT IGBTs

K. Sheng, B. W. Williams, S. J. Finney

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.

Original language	English
Pages (from-to)	2276-2277
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	23
Publication status	Published - 12 Nov 1998

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title = "Maximum operating junction temperature of PT and NPT IGBTs",

abstract = "The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.",

author = "K. Sheng and Williams, {B. W.} and Finney, {S. J.}",

year = "1998",

month = nov,

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language = "English",

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pages = "2276--2277",

journal = "Electronics Letters",

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TY - JOUR

T1 - Maximum operating junction temperature of PT and NPT IGBTs

AU - Sheng, K.

AU - Williams, B. W.

AU - Finney, S. J.

PY - 1998/11/12

Y1 - 1998/11/12

N2 - The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.

AB - The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.

UR - http://www.scopus.com/inward/record.url?scp=0032202798&partnerID=8YFLogxK

M3 - Article

VL - 34

SP - 2276

EP - 2277

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 23

ER -

Maximum operating junction temperature of PT and NPT IGBTs

Abstract

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