Abstract
The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.
| Original language | English |
|---|---|
| Pages (from-to) | 2276-2277 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 34 |
| Issue number | 23 |
| Publication status | Published - 12 Nov 1998 |
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Maximum operating junction temperature of PT and NPT IGBTs. / Sheng, K.; Williams, B. W.; Finney, S. J.
In: Electronics Letters, Vol. 34, No. 23, 12.11.1998, p. 2276-2277.Research output: Contribution to journal › Article
TY - JOUR
T1 - Maximum operating junction temperature of PT and NPT IGBTs
AU - Sheng, K.
AU - Williams, B. W.
AU - Finney, S. J.
PY - 1998/11/12
Y1 - 1998/11/12
N2 - The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.
AB - The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.
UR - http://www.scopus.com/inward/record.url?scp=0032202798&partnerID=8YFLogxK
M3 - Article
VL - 34
SP - 2276
EP - 2277
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 23
ER -