Manipulating exciton fine structure in quantum dots with a lateral electric field

B. D. Gerardot, S. Seidl, P. A. Dalgarno, R. J. Warburton, D. Granados, J. M. Garcia, K. Kowalik, O. Krebs, K. Karrai, A. Badolato, P. M. Petroff

Research output: Contribution to journalArticlepeer-review

174 Citations (Scopus)

Abstract

The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. © 2007 American Institute of Physics.

Original languageEnglish
Article number041101
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number4
DOIs
Publication statusPublished - 22 Jan 2007

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