Abstract
The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. © 2007 American Institute of Physics.
Original language | English |
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Article number | 041101 |
Pages (from-to) | - |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 4 |
DOIs | |
Publication status | Published - 22 Jan 2007 |