Manipulating exciton fine structure in quantum dots with a lateral electric field

B. D. Gerardot; S. Seidl; P. A. Dalgarno; R. J. Warburton; D. Granados; J. M. Garcia; K. Kowalik; O. Krebs; K. Karrai; A. Badolato; P. M. Petroff

doi:10.1063/1.2431758

Manipulating exciton fine structure in quantum dots with a lateral electric field

B. D. Gerardot, S. Seidl, P. A. Dalgarno, R. J. Warburton, D. Granados, J. M. Garcia, K. Kowalik, O. Krebs, K. Karrai, A. Badolato, P. M. Petroff

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

189 Citations (Scopus)

Abstract

The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. © 2007 American Institute of Physics.

Original language	English
Article number	041101
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	4
DOIs	https://doi.org/10.1063/1.2431758
Publication status	Published - 22 Jan 2007

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title = "Manipulating exciton fine structure in quantum dots with a lateral electric field",

abstract = "The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. {\textcopyright} 2007 American Institute of Physics.",

author = "Gerardot, {B. D.} and S. Seidl and Dalgarno, {P. A.} and Warburton, {R. J.} and D. Granados and Garcia, {J. M.} and K. Kowalik and O. Krebs and K. Karrai and A. Badolato and Petroff, {P. M.}",

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AU - Gerardot, B. D.

AU - Seidl, S.

AU - Dalgarno, P. A.

AU - Warburton, R. J.

AU - Granados, D.

AU - Garcia, J. M.

AU - Kowalik, K.

AU - Krebs, O.

AU - Karrai, K.

AU - Badolato, A.

AU - Petroff, P. M.

PY - 2007/1/22

Y1 - 2007/1/22

N2 - The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. © 2007 American Institute of Physics.

AB - The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. © 2007 American Institute of Physics.

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VL - 90

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041101

ER -

Manipulating exciton fine structure in quantum dots with a lateral electric field

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