Low-temperature MBE growth of p-type ZnSe using UV laser irradiation

J. Simpson; I. Hauksson; S. Y. Wang; H. Stewart; K. A. Prior; B. C. Cavenett

Low-temperature MBE growth of p-type ZnSe using UV laser irradiation

J. Simpson, I. Hauksson, S. Y. Wang, H. Stewart, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Photo-assisted p-type doping of ZnSe has been performed for the first time using active-nitrogen doping and UV laser illumination of the growth surface. Above band gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (N_A - N_D) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen doped ZnSe. © 1993.

Original language	English
Pages (from-to)	164-168
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	185
Issue number	1-4
Publication status	Published - Apr 1993

Cite this

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title = "Low-temperature MBE growth of p-type ZnSe using UV laser irradiation",

abstract = "Photo-assisted p-type doping of ZnSe has been performed for the first time using active-nitrogen doping and UV laser illumination of the growth surface. Above band gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen doped ZnSe. {\textcopyright} 1993.",

author = "J. Simpson and I. Hauksson and Wang, \{S. Y.\} and H. Stewart and Prior, \{K. A.\} and Cavenett, \{B. C.\}",

year = "1993",

month = apr,

language = "English",

volume = "185",

pages = "164--168",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1-4",

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TY - JOUR

T1 - Low-temperature MBE growth of p-type ZnSe using UV laser irradiation

AU - Simpson, J.

AU - Hauksson, I.

AU - Wang, S. Y.

AU - Stewart, H.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1993/4

Y1 - 1993/4

N2 - Photo-assisted p-type doping of ZnSe has been performed for the first time using active-nitrogen doping and UV laser illumination of the growth surface. Above band gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen doped ZnSe. © 1993.

AB - Photo-assisted p-type doping of ZnSe has been performed for the first time using active-nitrogen doping and UV laser illumination of the growth surface. Above band gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen doped ZnSe. © 1993.

UR - https://www.scopus.com/pages/publications/0027574339

M3 - Article

SN - 0921-4526

VL - 185

SP - 164

EP - 168

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Low-temperature MBE growth of p-type ZnSe using UV laser irradiation

Abstract

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