Abstract
Photo-assisted p-type doping of ZnSe has been performed for the first time using active-nitrogen doping and UV laser illumination of the growth surface. Above band gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen doped ZnSe. © 1993.
Original language | English |
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Pages (from-to) | 164-168 |
Number of pages | 5 |
Journal | Physica B: Condensed Matter |
Volume | 185 |
Issue number | 1-4 |
Publication status | Published - Apr 1993 |