Low-temperature MBE growth of p-type ZnSe using UV laser irradiation

J. Simpson, I. Hauksson, S. Y. Wang, H. Stewart, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Photo-assisted p-type doping of ZnSe has been performed for the first time using active-nitrogen doping and UV laser illumination of the growth surface. Above band gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen doped ZnSe. © 1993.

Original languageEnglish
Pages (from-to)164-168
Number of pages5
JournalPhysica B: Condensed Matter
Volume185
Issue number1-4
Publication statusPublished - Apr 1993

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    Simpson, J., Hauksson, I., Wang, S. Y., Stewart, H., Prior, K. A., & Cavenett, B. C. (1993). Low-temperature MBE growth of p-type ZnSe using UV laser irradiation. Physica B: Condensed Matter, 185(1-4), 164-168.