Low temperature B activation in SOI using optimised vacancy engineering implants

A. J. Smith, B. Colombeau, Nick Bennett, R. M. Gwilliam, Nick E. B. Cowern, B. J. Sealy, N. Cowern

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this study 300keV and IMeV Si vacancy engineering implants have been used to optimise the activation of a 2keV 1×10 15cm -2 B implant into SOI. Although the two implants generate a similar areal density of excess vacancies in the SOI top layer, Hall Effect measurements show that low temperature activation is possible to a greater level with the 300keV Si co-implant than with the IMeV implant. Hall and SIMS data are consistent with a high level of activation of the B at 700°C, with no significant diffusion at the metallurgical junction depth.

Original languageEnglish
Title of host publicationMRS Proceedings
Subtitle of host publicationSymposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices
EditorsS. Ashok, J. Chevallier, P. Kiesel, B. L. Sopori, M. Tabe
Number of pages5
Volume864
DOIs
Publication statusPublished - 2005
Event2005 Materials Research Society Spring Meeting and Exhibit - San Francisco, CA, United States
Duration: 28 Mar 20051 Apr 2005

Conference

Conference2005 Materials Research Society Spring Meeting and Exhibit
CountryUnited States
CitySan Francisco, CA
Period28/03/051/04/05

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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