Low temperature B activation in SOI using optimised vacancy engineering implants

A. J. Smith; B. Colombeau; Nick Bennett; R. M. Gwilliam; Nick E. B. Cowern; B. J. Sealy; N. Cowern

doi:10.1557/PROC-864-E7.1

Low temperature B activation in SOI using optimised vacancy engineering implants

A. J. Smith^*, B. Colombeau, Nick Bennett, R. M. Gwilliam, Nick E. B. Cowern, B. J. Sealy, N. Cowern

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

In this study 300keV and IMeV Si vacancy engineering implants have been used to optimise the activation of a 2keV 1×10 ¹⁵cm ^-2 B implant into SOI. Although the two implants generate a similar areal density of excess vacancies in the SOI top layer, Hall Effect measurements show that low temperature activation is possible to a greater level with the 300keV Si co-implant than with the IMeV implant. Hall and SIMS data are consistent with a high level of activation of the B at 700°C, with no significant diffusion at the metallurgical junction depth.

Original language	English
Title of host publication	MRS Proceedings
Subtitle of host publication	Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices
Editors	S. Ashok, J. Chevallier, P. Kiesel, B. L. Sopori, M. Tabe
Number of pages	5
Volume	864
DOIs	https://doi.org/10.1557/PROC-864-E7.1
Publication status	Published - 2005
Event	2005 Materials Research Society Spring Meeting and Exhibit - San Francisco, CA, United States Duration: 28 Mar 2005 → 1 Apr 2005

Conference

Conference	2005 Materials Research Society Spring Meeting and Exhibit
Country/Territory	United States
City	San Francisco, CA
Period	28/03/05 → 1/04/05

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1557/PROC-864-E7.1

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Smith, A. J., Colombeau, B., Bennett, N., Gwilliam, R. M., Cowern, N. E. B., Sealy, B. J., & Cowern, N. (2005). Low temperature B activation in SOI using optimised vacancy engineering implants. In S. Ashok, J. Chevallier, P. Kiesel, B. L. Sopori, & M. Tabe (Eds.), MRS Proceedings: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices (Vol. 864). Article E7.1 https://doi.org/10.1557/PROC-864-E7.1

@inproceedings{95f7f417f4da4618bd136f2319886942,

title = "Low temperature B activation in SOI using optimised vacancy engineering implants",

abstract = "In this study 300keV and IMeV Si vacancy engineering implants have been used to optimise the activation of a 2keV 1×10 15cm -2 B implant into SOI. Although the two implants generate a similar areal density of excess vacancies in the SOI top layer, Hall Effect measurements show that low temperature activation is possible to a greater level with the 300keV Si co-implant than with the IMeV implant. Hall and SIMS data are consistent with a high level of activation of the B at 700°C, with no significant diffusion at the metallurgical junction depth.",

author = "Smith, {A. J.} and B. Colombeau and Nick Bennett and Gwilliam, {R. M.} and Cowern, {Nick E. B.} and Sealy, {B. J.} and N. Cowern",

year = "2005",

doi = "10.1557/PROC-864-E7.1",

language = "English",

volume = "864",

editor = "S. Ashok and J. Chevallier and P. Kiesel and Sopori, {B. L.} and M. Tabe",

booktitle = "MRS Proceedings",

note = "2005 Materials Research Society Spring Meeting and Exhibit ; Conference date: 28-03-2005 Through 01-04-2005",

}

Smith, AJ, Colombeau, B, Bennett, N, Gwilliam, RM, Cowern, NEB, Sealy, BJ & Cowern, N 2005, Low temperature B activation in SOI using optimised vacancy engineering implants. in S Ashok, J Chevallier, P Kiesel, BL Sopori & M Tabe (eds), MRS Proceedings: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices. vol. 864, E7.1, 2005 Materials Research Society Spring Meeting and Exhibit, San Francisco, CA, United States, 28/03/05. https://doi.org/10.1557/PROC-864-E7.1

Low temperature B activation in SOI using optimised vacancy engineering implants. / Smith, A. J.; Colombeau, B.; Bennett, Nick et al.
MRS Proceedings: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices. ed. / S. Ashok; J. Chevallier; P. Kiesel; B. L. Sopori; M. Tabe. Vol. 864 2005. E7.1.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Gwilliam, R. M.

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AU - Sealy, B. J.

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N2 - In this study 300keV and IMeV Si vacancy engineering implants have been used to optimise the activation of a 2keV 1×10 15cm -2 B implant into SOI. Although the two implants generate a similar areal density of excess vacancies in the SOI top layer, Hall Effect measurements show that low temperature activation is possible to a greater level with the 300keV Si co-implant than with the IMeV implant. Hall and SIMS data are consistent with a high level of activation of the B at 700°C, with no significant diffusion at the metallurgical junction depth.

AB - In this study 300keV and IMeV Si vacancy engineering implants have been used to optimise the activation of a 2keV 1×10 15cm -2 B implant into SOI. Although the two implants generate a similar areal density of excess vacancies in the SOI top layer, Hall Effect measurements show that low temperature activation is possible to a greater level with the 300keV Si co-implant than with the IMeV implant. Hall and SIMS data are consistent with a high level of activation of the B at 700°C, with no significant diffusion at the metallurgical junction depth.

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A2 - Ashok, S.

A2 - Chevallier, J.

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Smith AJ, Colombeau B, Bennett N, Gwilliam RM, Cowern NEB, Sealy BJ et al. Low temperature B activation in SOI using optimised vacancy engineering implants. In Ashok S, Chevallier J, Kiesel P, Sopori BL, Tabe M, editors, MRS Proceedings: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices. Vol. 864. 2005. E7.1 doi: 10.1557/PROC-864-E7.1

Low temperature B activation in SOI using optimised vacancy engineering implants

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