Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs

P Tomasini, K. Arai, F. Lu, Z. Q. Zhu, T. Sekiguchi, T. Yao, M. Y. Shen, T. Goto

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Abstract

Ultrathin ZnSe/ZnS single quantum well structures have been grown by molecular beam epitaxy, on GaP substrates with high Miller indices. The optical properties of pseudomorphic ZnSe/ZnS single quantum wells have been investigated by conventional optical methods. Power-dependence and temperature-dependence measurements show that structural disorder plays an important role in ZnSe/ZnS ultrathin single quantum wells. The luminescence emission is the collective response of a group of local potentials with quantum dotlike characteristics. Consequently, the luminescence peak is the convolution of individual narrow lines. In addition, the luminescence spectra are dominated by a thermal escape of carriers when investigating the temperature dependence. © 1998 American Institute of Physics.

Original languageEnglish
Pages (from-to)6028-6033
Number of pages6
JournalJournal of Applied Physics
Volume83
Issue number11
Publication statusPublished - 1 Jun 1998

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    Tomasini, P., Arai, K., Lu, F., Zhu, Z. Q., Sekiguchi, T., Yao, T., Shen, M. Y., & Goto, T. (1998). Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs. Journal of Applied Physics, 83(11), 6028-6033.