Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs

P Tomasini, K. Arai, F. Lu, Z. Q. Zhu, T. Sekiguchi, T. Yao, M. Y. Shen, T. Goto

Research output: Contribution to journalArticle

Abstract

Ultrathin ZnSe/ZnS single quantum well structures have been grown by molecular beam epitaxy, on GaP substrates with high Miller indices. The optical properties of pseudomorphic ZnSe/ZnS single quantum wells have been investigated by conventional optical methods. Power-dependence and temperature-dependence measurements show that structural disorder plays an important role in ZnSe/ZnS ultrathin single quantum wells. The luminescence emission is the collective response of a group of local potentials with quantum dotlike characteristics. Consequently, the luminescence peak is the convolution of individual narrow lines. In addition, the luminescence spectra are dominated by a thermal escape of carriers when investigating the temperature dependence. © 1998 American Institute of Physics.

Original languageEnglish
Pages (from-to)6028-6033
Number of pages6
JournalJournal of Applied Physics
Volume83
Issue number11
Publication statusPublished - 1 Jun 1998

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escape
slabs
excitons
quantum wells
luminescence
temperature dependence
convolution integrals
molecular beam epitaxy
disorders
optics
optical properties
physics

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Tomasini, P., Arai, K., Lu, F., Zhu, Z. Q., Sekiguchi, T., Yao, T., ... Goto, T. (1998). Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs. Journal of Applied Physics, 83(11), 6028-6033.
Tomasini, P ; Arai, K. ; Lu, F. ; Zhu, Z. Q. ; Sekiguchi, T. ; Yao, T. ; Shen, M. Y. ; Goto, T. / Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs. In: Journal of Applied Physics. 1998 ; Vol. 83, No. 11. pp. 6028-6033.
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abstract = "Ultrathin ZnSe/ZnS single quantum well structures have been grown by molecular beam epitaxy, on GaP substrates with high Miller indices. The optical properties of pseudomorphic ZnSe/ZnS single quantum wells have been investigated by conventional optical methods. Power-dependence and temperature-dependence measurements show that structural disorder plays an important role in ZnSe/ZnS ultrathin single quantum wells. The luminescence emission is the collective response of a group of local potentials with quantum dotlike characteristics. Consequently, the luminescence peak is the convolution of individual narrow lines. In addition, the luminescence spectra are dominated by a thermal escape of carriers when investigating the temperature dependence. {\circledC} 1998 American Institute of Physics.",
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Tomasini, P, Arai, K, Lu, F, Zhu, ZQ, Sekiguchi, T, Yao, T, Shen, MY & Goto, T 1998, 'Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs', Journal of Applied Physics, vol. 83, no. 11, pp. 6028-6033.

Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs. / Tomasini, P; Arai, K.; Lu, F.; Zhu, Z. Q.; Sekiguchi, T.; Yao, T.; Shen, M. Y.; Goto, T.

In: Journal of Applied Physics, Vol. 83, No. 11, 01.06.1998, p. 6028-6033.

Research output: Contribution to journalArticle

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AU - Tomasini, P

AU - Arai, K.

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AU - Zhu, Z. Q.

AU - Sekiguchi, T.

AU - Yao, T.

AU - Shen, M. Y.

AU - Goto, T.

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