Abstract
The effects of illumination with white light and annealing to 180-200 degrees C on the field-effect conductance of a-Si:H FETS have been investigated. The effects produced by illumination are completely reversed by annealing. The authors find that illumination produces two types of change in the field-effect conductance; first a maximum decrease in the off-conductance of about 300%, with a positive shift of the threshold voltage' and secondly a horizontal displacement of the conductance characteristic in the pre-threshold region with no change in the off-conductance. In both cases there is a movement of the bulk Fermi level with respect to the conduction band mobility edge. These two effects may be produced in a single silicon film sample.
| Original language | English |
|---|---|
| Article number | 004 |
| Pages (from-to) | 649-653 |
| Number of pages | 5 |
| Journal | Semiconductor Science and Technology |
| Volume | 2 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1987 |