Lifetime measurements of group V donor rydberg states in silicon at THz frequencies

Stephen A. Lynch, P. Thornton Greenland, Nguyen Q. Vinh, Konstantin Litvinenko, Britta Redlich, Lex Van Der Meer, Marc Warner, A. Marshall Stoneham, Gabriel Aeppli, Carl R. Pidgeon, Ben N. Murdin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have measured the T1 lifetimes of Rydberg states of phosphorus and arsenic in silicon at THz frequencies using the FELIX pulsed free electron laser. Our results show the dominant decoherence mechanism is lifetime broadening. © 2008 IEEE.

Original languageEnglish
Title of host publication2008 5th International Conference on Group IV Photonics, GFP
Pages24-26
Number of pages3
DOIs
Publication statusPublished - 2008
Event2008 5th International Conference on Group IV Photonics - Sorrento, Italy
Duration: 17 Sep 200819 Sep 2008

Conference

Conference2008 5th International Conference on Group IV Photonics
Abbreviated titleGFP
CountryItaly
CitySorrento
Period17/09/0819/09/08

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    Lynch, S. A., Greenland, P. T., Vinh, N. Q., Litvinenko, K., Redlich, B., Van Der Meer, L., Warner, M., Stoneham, A. M., Aeppli, G., Pidgeon, C. R., & Murdin, B. N. (2008). Lifetime measurements of group V donor rydberg states in silicon at THz frequencies. In 2008 5th International Conference on Group IV Photonics, GFP (pp. 24-26) https://doi.org/10.1109/GROUP4.2008.4638084