Lateral spatial switching of excitons using vertical electric fields in semiconductor quantum rings

P. G. McDonald; J. Shumway; I. Galbraith

doi:10.1063/1.3504230

Lateral spatial switching of excitons using vertical electric fields in semiconductor quantum rings

P. G. McDonald
, J. Shumway
, I. Galbraith

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We study the response of exciton complexes in semiconductor quantum rings to vertical electric fields, using path integral quantum Monte Carlo simulations. The interaction of a vertical applied field and the piezoelectric fields of the ring with correlated excitonic complexes switches excitons between two different lateral locations within the ring. This control should be observable through polarizability and dipole measurements, and, for biexcitons, an energy shift beyond the normal Stark shift. © 2010 American Institute of Physics.

Original language	English
Article number	173101
Journal	Applied Physics Letters
Volume	97
Issue number	17
DOIs	https://doi.org/10.1063/1.3504230
Publication status	Published - 25 Oct 2010

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title = "Lateral spatial switching of excitons using vertical electric fields in semiconductor quantum rings",

abstract = "We study the response of exciton complexes in semiconductor quantum rings to vertical electric fields, using path integral quantum Monte Carlo simulations. The interaction of a vertical applied field and the piezoelectric fields of the ring with correlated excitonic complexes switches excitons between two different lateral locations within the ring. This control should be observable through polarizability and dipole measurements, and, for biexcitons, an energy shift beyond the normal Stark shift. {\textcopyright} 2010 American Institute of Physics.",

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AU - McDonald, P. G.

AU - Shumway, J.

AU - Galbraith, I.

PY - 2010/10/25

Y1 - 2010/10/25

N2 - We study the response of exciton complexes in semiconductor quantum rings to vertical electric fields, using path integral quantum Monte Carlo simulations. The interaction of a vertical applied field and the piezoelectric fields of the ring with correlated excitonic complexes switches excitons between two different lateral locations within the ring. This control should be observable through polarizability and dipole measurements, and, for biexcitons, an energy shift beyond the normal Stark shift. © 2010 American Institute of Physics.

AB - We study the response of exciton complexes in semiconductor quantum rings to vertical electric fields, using path integral quantum Monte Carlo simulations. The interaction of a vertical applied field and the piezoelectric fields of the ring with correlated excitonic complexes switches excitons between two different lateral locations within the ring. This control should be observable through polarizability and dipole measurements, and, for biexcitons, an energy shift beyond the normal Stark shift. © 2010 American Institute of Physics.

U2 - 10.1063/1.3504230

DO - 10.1063/1.3504230

M3 - Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173101

ER -

Lateral spatial switching of excitons using vertical electric fields in semiconductor quantum rings

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