Lateral spatial switching of excitons using vertical electric fields in semiconductor quantum rings

P. G. McDonald, J. Shumway, I. Galbraith

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We study the response of exciton complexes in semiconductor quantum rings to vertical electric fields, using path integral quantum Monte Carlo simulations. The interaction of a vertical applied field and the piezoelectric fields of the ring with correlated excitonic complexes switches excitons between two different lateral locations within the ring. This control should be observable through polarizability and dipole measurements, and, for biexcitons, an energy shift beyond the normal Stark shift. © 2010 American Institute of Physics.

Original languageEnglish
Article number173101
JournalApplied Physics Letters
Volume97
Issue number17
DOIs
Publication statusPublished - 25 Oct 2010

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