Lateral excitonic switching in vertically stacked quantum dots

Jaroslaw Jarzynka, Peter G. McDonald, John Shumway, Ian Galbraith

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Abstract

We show that the application of a vertical electric field to the Coulomb interacting system in stacked quantum dots leads to a 90° in-plane switching of charge probability distribution in contrast to a single dot, where no such switching exists. Results are obtained using path integral quantum Monte Carlo with realistic dot geometry, alloy composition, and piezo-electric potential profiles. The origin of the switching lies in the strain interactions between the stacked dots hence the need for more than one layer of dots. The lateral polarization and electric field dependence of the radiative lifetimes of the excitonic switch are also discussed.
Original languageEnglish
Article number224303
JournalJournal of Applied Physics
Volume119
Issue number22
DOIs
Publication statusPublished - 14 Jun 2016

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    Jarzynka, J., McDonald, P. G., Shumway, J., & Galbraith, I. (2016). Lateral excitonic switching in vertically stacked quantum dots. Journal of Applied Physics, 119(22), [224303]. https://doi.org/10.1063/1.4953391