Laser‐induced acoustic phonon gratings in semiconductor thin films

J  WANG; D C  HUTCHINGS; A  MILLER; E W  VANSTRYLAND; K R  WELFORD; I T  MUIRHEAD; K L  LEWIS

doi:10.1063/1.353838

Laser‐induced acoustic phonon gratings in semiconductor thin films

J WANG
, D C HUTCHINGS
, A MILLER
, E W VANSTRYLAND
, K R WELFORD
, I T MUIRHEAD
, K L LEWIS

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

Laser induced ultrasonic standing waves are observed in molecular beam deposited ZnSe thin films using the transient grating technique. This observation is attributed to a very short trapping time for single photon absorption in the band tail. The period of the standing wave is used to determine the acoustic phonon velocity in the ZnSe thin film which indicates that it is longitudinal acoustic phonons which are excited.

Original language	English
Pages (from-to)	4746-4751
Number of pages	6
Journal	Journal of Applied Physics
Volume	73
Issue number	10
DOIs	https://doi.org/10.1063/1.353838
Publication status	Published - 15 May 1993

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title = "Laser‐induced acoustic phonon gratings in semiconductor thin films",

abstract = "Laser induced ultrasonic standing waves are observed in molecular beam deposited ZnSe thin films using the transient grating technique. This observation is attributed to a very short trapping time for single photon absorption in the band tail. The period of the standing wave is used to determine the acoustic phonon velocity in the ZnSe thin film which indicates that it is longitudinal acoustic phonons which are excited.",

author = "J WANG and HUTCHINGS, \{D C\} and A MILLER and VANSTRYLAND, \{E W\} and WELFORD, \{K R\} and MUIRHEAD, \{I T\} and LEWIS, \{K L\}",

year = "1993",

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AU - WANG, J

AU - HUTCHINGS, D C

AU - MILLER, A

AU - VANSTRYLAND, E W

AU - WELFORD, K R

AU - MUIRHEAD, I T

AU - LEWIS, K L

PY - 1993/5/15

Y1 - 1993/5/15

N2 - Laser induced ultrasonic standing waves are observed in molecular beam deposited ZnSe thin films using the transient grating technique. This observation is attributed to a very short trapping time for single photon absorption in the band tail. The period of the standing wave is used to determine the acoustic phonon velocity in the ZnSe thin film which indicates that it is longitudinal acoustic phonons which are excited.

AB - Laser induced ultrasonic standing waves are observed in molecular beam deposited ZnSe thin films using the transient grating technique. This observation is attributed to a very short trapping time for single photon absorption in the band tail. The period of the standing wave is used to determine the acoustic phonon velocity in the ZnSe thin film which indicates that it is longitudinal acoustic phonons which are excited.

U2 - 10.1063/1.353838

DO - 10.1063/1.353838

M3 - Article

SN - 0021-8979

VL - 73

SP - 4746

EP - 4751

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Laser‐induced acoustic phonon gratings in semiconductor thin films

Abstract

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