Laser writing of high-purity gold lines

M. Jubber; J. I B Wilson; J. L. Davidson; P. A. Fernie; P. John

doi:10.1063/1.101585

Laser writing of high-purity gold lines

M. Jubber
, J. I B Wilson
, J. L. Davidson
, P. A. Fernie
, P. John

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et ₃ P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 µO cm, comparable with bulk gold, were attained at a writing speed of 35 µm s^-1. The track profiles suggest that deposition is more rapid on the gold surface than on the SiO ₂ substrate.

Original language	English
Pages (from-to)	1477-1479
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	14
DOIs	https://doi.org/10.1063/1.101585
Publication status	Published - 1989

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10.1063/1.101585

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title = "Laser writing of high-purity gold lines",

abstract = "Gold tracks of better than 98\% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et 3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 µO cm, comparable with bulk gold, were attained at a writing speed of 35 µm s-1. The track profiles suggest that deposition is more rapid on the gold surface than on the SiO 2 substrate.",

author = "M. Jubber and Wilson, \{J. I B\} and Davidson, \{J. L.\} and Fernie, \{P. A.\} and P. John",

year = "1989",

doi = "10.1063/1.101585",

language = "English",

volume = "55",

pages = "1477--1479",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

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TY - JOUR

T1 - Laser writing of high-purity gold lines

AU - Jubber, M.

AU - Wilson, J. I B

AU - Davidson, J. L.

AU - Fernie, P. A.

AU - John, P.

PY - 1989

Y1 - 1989

N2 - Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et 3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 µO cm, comparable with bulk gold, were attained at a writing speed of 35 µm s-1. The track profiles suggest that deposition is more rapid on the gold surface than on the SiO 2 substrate.

AB - Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et 3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 µO cm, comparable with bulk gold, were attained at a writing speed of 35 µm s-1. The track profiles suggest that deposition is more rapid on the gold surface than on the SiO 2 substrate.

UR - https://www.scopus.com/pages/publications/0006323518

U2 - 10.1063/1.101585

DO - 10.1063/1.101585

M3 - Article

SN - 0003-6951

VL - 55

SP - 1477

EP - 1479

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Laser writing of high-purity gold lines

Abstract

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