Abstract
Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et 3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 µO cm, comparable with bulk gold, were attained at a writing speed of 35 µm s-1. The track profiles suggest that deposition is more rapid on the gold surface than on the SiO 2 substrate.
Original language | English |
---|---|
Pages (from-to) | 1477-1479 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 55 |
Issue number | 14 |
DOIs | |
Publication status | Published - 1989 |