Laser writing of high-purity gold lines

M. Jubber, J. I B Wilson, J. L. Davidson, P. A. Fernie, P. John

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et 3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 µO cm, comparable with bulk gold, were attained at a writing speed of 35 µm s-1. The track profiles suggest that deposition is more rapid on the gold surface than on the SiO 2 substrate.

Original languageEnglish
Pages (from-to)1477-1479
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 1989


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