Laser irradiation of compensation doped hydrogenated amorphous silicon

S. K. Al-Sabbagh, J. I B Wilson, W. Z. Manookian

Research output: Contribution to journalArticle

Abstract

A Q-switched ruby laser was used to study both reversible and permanent changes in the electrical conductivity of partially compensated n-type and p-type hydrogenated amorphous silicon (a-Si:H). This method of illumination provides an accelerated test of the magnitude of reversible photoinduced changes (known as the Staebler-Wronski effect) if the laser beam energy is insufficient to produce gross structural alterations in the samples. Compensated films are less susceptible to Staebler-Wronski changes than are single doped films. At energy densities above about 0.2 J cm-2, recrystallization of these thin films occurs, to an extent dependent on the energy. Energies above about 1.2 J cm-2 produced no further increases of conductivity. The total increase in conductivity over this energy range was 104-105 for p-type films and 103-104 for n-type films giving similar saturated conductivity values for both series of films. There were also large improvements in photosensitivity.

Original languageEnglish
Pages (from-to)718-720
Number of pages3
JournalJournal of Applied Physics
Volume64
Issue number2
DOIs
Publication statusPublished - 1988

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amorphous silicon
irradiation
lasers
conductivity
ruby lasers
energy
photosensitivity
Q switched lasers
flux density
illumination
laser beams
electrical resistivity
thin films

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Al-Sabbagh, S. K. ; Wilson, J. I B ; Manookian, W. Z. / Laser irradiation of compensation doped hydrogenated amorphous silicon. In: Journal of Applied Physics. 1988 ; Vol. 64, No. 2. pp. 718-720.
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Laser irradiation of compensation doped hydrogenated amorphous silicon. / Al-Sabbagh, S. K.; Wilson, J. I B; Manookian, W. Z.

In: Journal of Applied Physics, Vol. 64, No. 2, 1988, p. 718-720.

Research output: Contribution to journalArticle

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AU - Al-Sabbagh, S. K.

AU - Wilson, J. I B

AU - Manookian, W. Z.

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