Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine

J. T. Mullins; G. Horsburgh; J. Simpson; P. Thompson; M. R. Taghizadeh; I. Hauksson; S. Y. Wang; K. A. Prior; B. C. Cavenett; G. M. Williams; A. G. Cullis

doi:10.1016/0022-0248(94)90833-8

Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine

J. T. Mullins, G. Horsburgh, J. Simpson, P. Thompson, M. R. Taghizadeh, I. Hauksson, S. Y. Wang, K. A. Prior, B. C. Cavenett, G. M. Williams, A. G. Cullis

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

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Abstract

An optical projection system has been developed which allows patterning of both layer thickness and donor concentration in epitaxial films of ZnSe during growth by molecular beam epitaxy. Doping features with a period as small as 40 µ m have been produced and it appears possible to reduce this by at least one order of magnitude. Such in-situ techniques may be valuable for the fabrication of more sophisticated devices than are currently being produced from the wide-gap II-VI compounds. © 1994.

Original language	English
Pages (from-to)	357-361
Number of pages	5
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90833-8
Publication status	Published - 2 Apr 1994

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title = "Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine",

abstract = "An optical projection system has been developed which allows patterning of both layer thickness and donor concentration in epitaxial films of ZnSe during growth by molecular beam epitaxy. Doping features with a period as small as 40 µ m have been produced and it appears possible to reduce this by at least one order of magnitude. Such in-situ techniques may be valuable for the fabrication of more sophisticated devices than are currently being produced from the wide-gap II-VI compounds. {\textcopyright} 1994.",

author = "Mullins, {J. T.} and G. Horsburgh and J. Simpson and P. Thompson and Taghizadeh, {M. R.} and I. Hauksson and Wang, {S. Y.} and Prior, {K. A.} and Cavenett, {B. C.} and Williams, {G. M.} and Cullis, {A. G.}",

year = "1994",

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doi = "10.1016/0022-0248(94)90833-8",

language = "English",

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TY - JOUR

T1 - Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine

AU - Mullins, J. T.

AU - Horsburgh, G.

AU - Simpson, J.

AU - Thompson, P.

AU - Taghizadeh, M. R.

AU - Hauksson, I.

AU - Wang, S. Y.

AU - Prior, K. A.

AU - Cavenett, B. C.

AU - Williams, G. M.

AU - Cullis, A. G.

PY - 1994/4/2

Y1 - 1994/4/2

N2 - An optical projection system has been developed which allows patterning of both layer thickness and donor concentration in epitaxial films of ZnSe during growth by molecular beam epitaxy. Doping features with a period as small as 40 µ m have been produced and it appears possible to reduce this by at least one order of magnitude. Such in-situ techniques may be valuable for the fabrication of more sophisticated devices than are currently being produced from the wide-gap II-VI compounds. © 1994.

AB - An optical projection system has been developed which allows patterning of both layer thickness and donor concentration in epitaxial films of ZnSe during growth by molecular beam epitaxy. Doping features with a period as small as 40 µ m have been produced and it appears possible to reduce this by at least one order of magnitude. Such in-situ techniques may be valuable for the fabrication of more sophisticated devices than are currently being produced from the wide-gap II-VI compounds. © 1994.

UR - http://www.scopus.com/inward/record.url?scp=0028760816&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(94)90833-8

DO - 10.1016/0022-0248(94)90833-8

M3 - Article

SN - 0022-0248

VL - 138

SP - 357

EP - 361

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine

Abstract

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