Laser 'Direct Writing' of Silicon pn Junctions

David Milne, A. Black, J. I B Wilson, P. John

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Rectifying pn junctions have been deposited by a focused argon laser beam from silane and dopant gases on to oxidized silicon wafers. The characteristics depend on the deposition conditions and on the dopant gas content, but are not those of ideal junctions, probably due to a nonabrupt interface from the present growth parameter values.

Original languageEnglish
Pages (from-to)19-20
Number of pages2
JournalElectronics Letters
Issue number1
Publication statusPublished - 7 Jan 1988


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