Abstract
Rectifying pn junctions have been deposited by a focused argon laser beam from silane and dopant gases on to oxidized silicon wafers. The characteristics depend on the deposition conditions and on the dopant gas content, but are not those of ideal junctions, probably due to a nonabrupt interface from the present growth parameter values.
| Original language | English |
|---|---|
| Pages (from-to) | 19-20 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 24 |
| Issue number | 1 |
| Publication status | Published - 7 Jan 1988 |