This paper reports on the laser CVD (Chemical Vapor Deposition) of aluminum. The program is aimed at producing metallic or metal silicide interconnects rather than doped polysilicon due to the more favorable RC time constant.
|Pages (from-to)||3. 1-3. 4|
|Journal||IEE Colloquium (Digest)|
|Issue number||1986 /129|
|Publication status||Published - 1986|