LASER DEPOSITION OF ALUMINIUM.

D. Cross; P. John; David Milne; J. I B Wilson

LASER DEPOSITION OF ALUMINIUM.

D. Cross, P. John, David Milne, J. I B Wilson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on the laser CVD (Chemical Vapor Deposition) of aluminum. The program is aimed at producing metallic or metal silicide interconnects rather than doped polysilicon due to the more favorable RC time constant.

Original language	English
Pages (from-to)	3. 1-3. 4
Journal	IEE Colloquium (Digest)
Issue number	1986 /129
Publication status	Published - 1986

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@article{bd6ef314c85747e3a7236fc172246fa1,

title = "LASER DEPOSITION OF ALUMINIUM.",

abstract = "This paper reports on the laser CVD (Chemical Vapor Deposition) of aluminum. The program is aimed at producing metallic or metal silicide interconnects rather than doped polysilicon due to the more favorable RC time constant.",

author = "D. Cross and P. John and David Milne and Wilson, {J. I B}",

year = "1986",

language = "English",

pages = "3. 1--3. 4",

journal = "IEE Colloquium (Digest)",

publisher = "Institute of Electrical Engineers",

number = "1986 /129",

}

TY - JOUR

T1 - LASER DEPOSITION OF ALUMINIUM.

AU - Cross, D.

AU - John, P.

AU - Milne, David

AU - Wilson, J. I B

PY - 1986

Y1 - 1986

N2 - This paper reports on the laser CVD (Chemical Vapor Deposition) of aluminum. The program is aimed at producing metallic or metal silicide interconnects rather than doped polysilicon due to the more favorable RC time constant.

AB - This paper reports on the laser CVD (Chemical Vapor Deposition) of aluminum. The program is aimed at producing metallic or metal silicide interconnects rather than doped polysilicon due to the more favorable RC time constant.

M3 - Article

SP - 3. 1-3. 4

JO - IEE Colloquium (Digest)

JF - IEE Colloquium (Digest)

IS - 1986 /129

ER -

LASER DEPOSITION OF ALUMINIUM.

Abstract

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