TY - JOUR
T1 - Laser-Assisted Sintering of Silver Nanoparticle Paste for Bonding of Silicon to DBC for High-Temperature Electronics Packaging
AU - Liu, G. D.
AU - Wang, Changhai
AU - Swingler, Jonathan
N1 - Funding Information:
Manuscript received September 8, 2020; revised November 16, 2020; accepted November 28, 2020. Date of publication December 23, 2020; date of current version March 19, 2021. This work was supported by the U.K. Engineering and Physical Sciences Research Council (EPSRC) under Grant EP/R024502/1. Recommended for publication by Associate Editor K. Sakuma upon evaluation of reviewers’ comments. (Corresponding author: Changhai Wang.) G. D. Liu and Changhai Wang are with the Institute of Sensors, Signals and Systems, Heriot-Watt University, Edinburgh EH14 4AS, U.K. (e-mail: [email protected]; [email protected]).
Publisher Copyright:
© 2011-2012 IEEE.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/3
Y1 - 2021/3
N2 - This article presents the development of a laser-assisted sintering method of a silver nanoparticle paste for bonding of a silicon chip to a direct bonded copper (DBC) substrate for high-temperature electronics packaging applications. The effects of the bonding parameters such as laser power, bonding pressure, and time on shear strength were studied. For comparison, samples using hotplate bonding were also produced and studied. Shear strength, cross section, and fracture surface analysis were carried out in reliability studies. The results show that shear strength of 10 MPa can be achieved at the bonding pressure of 3 MPa, laser power of 70 W, and a very short irradiation time of 1 min. The shear strength reached 20 MPa when the irradiation time was increased to 5 min. The research indicates that the shear strength can be improved by increasing the bonding pressure, laser power, and hence the sintering temperature and the irradiation time. The laser-assisted method with a short irradiation time of 5 min can produce the same level of shear strength as compared with the hotplate-based approach requiring a sintering time of tens of minutes. With the ability of fast and localized heating effect, the laser-assisted sintering method can improve the manufacturing efficiency for packaging of high-temperature electronics and sensors.
AB - This article presents the development of a laser-assisted sintering method of a silver nanoparticle paste for bonding of a silicon chip to a direct bonded copper (DBC) substrate for high-temperature electronics packaging applications. The effects of the bonding parameters such as laser power, bonding pressure, and time on shear strength were studied. For comparison, samples using hotplate bonding were also produced and studied. Shear strength, cross section, and fracture surface analysis were carried out in reliability studies. The results show that shear strength of 10 MPa can be achieved at the bonding pressure of 3 MPa, laser power of 70 W, and a very short irradiation time of 1 min. The shear strength reached 20 MPa when the irradiation time was increased to 5 min. The research indicates that the shear strength can be improved by increasing the bonding pressure, laser power, and hence the sintering temperature and the irradiation time. The laser-assisted method with a short irradiation time of 5 min can produce the same level of shear strength as compared with the hotplate-based approach requiring a sintering time of tens of minutes. With the ability of fast and localized heating effect, the laser-assisted sintering method can improve the manufacturing efficiency for packaging of high-temperature electronics and sensors.
KW - Die attach
KW - laser sintering
KW - silver nanoparticle paste
UR - http://www.scopus.com/inward/record.url?scp=85098773692&partnerID=8YFLogxK
U2 - 10.1109/TCPMT.2020.3046917
DO - 10.1109/TCPMT.2020.3046917
M3 - Article
AN - SCOPUS:85098773692
SN - 2156-3950
VL - 11
SP - 522
EP - 529
JO - IEEE Transactions on Components, Packaging and Manufacturing Technology
JF - IEEE Transactions on Components, Packaging and Manufacturing Technology
IS - 3
ER -