Landau level non-linear refraction in semiconductors

B. S. Wherrett, N. A. Higgins

Research output: Contribution to journalArticle

Abstract

Detailed comparisons are made of the results of two approaches to the problem of non-linear refraction at frequencies just below the band edge of a semiconductor. The magnetic field case discussed is shown to give potentially larger non-linearities than the zero-field situation. The physical origin of the non-linear dispersion is taken to be direct saturation of T2 broadened band states in the first model. In the second the refraction associated with a dynamic Burstein-Moss shift of the absorption edge is considered. Both models predict an extremely large non-linearity, of importance in the field of dispersive optical bistability. The results are also consistent with experimental observations of non-linear Faraday rotation and interband saturation in InSb.

Original languageEnglish
Article number020
Pages (from-to)1741-1751
Number of pages11
JournalJournal of Physics C: Solid State Physics
Volume15
Issue number8
DOIs
Publication statusPublished - 1982

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