Landau level lifetimes in an InAs/AlSb quantum well determined by a picosecond far-infrared pump-probe technique

B. N. Murdin, M. Kamal-Saadi, C. M. Ciesla, C. R. Pidgeon, C. J G M Langerak, R. A. Stradling, E. Gornik

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Abstract

We present measurements of Landau level lifetimes in a doped quantum well structure of InAs/ AlSb using a combination of pump-probe and saturation spectroscopy measurements. The cyclotron resonance was studied using far-infrared radiation from a free-electron laser has yielded the energy relaxation lifetime as a function of applied magnetic field, in the range ??c = 14.5 to 18.5 meV. An energy of 15 meV corresponds to the magnetophonon resonance ?l??c = ??LO with ?l = 2. The lifetime at this energy is at or below the resolution limit of the pump-probe measurement, which is 10 ps. The results both at T = 4 K and 80 K, show that the Landau level lifetime, t is 50 ± 5 ps off resonance. The so-called "LO phonon bottleneck" is evidently important in quenching the relaxation away from resonance.

Original languageEnglish
Pages (from-to)155-158
Number of pages4
JournalPhysica Status Solidi B - Basic Research
Volume204
Issue number1
Publication statusPublished - Nov 1997

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