Kilometer-range depth imaging at 1550 nm wavelength using an InGaAs/InP single-photon avalanche diode detector

Aongus McCarthy, Ximing Ren, Adriano Della Frera, Nathan R Gemmell, Nils J Krichel, Carmelo Scarcella, Alessandro Ruggeri, Alberto Tosi, Gerald Stuart Buller

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Abstract

We have used an InGaAs/InP single-photon avalanche diode detector module in conjunction with a time-of-flight depth imager operating at a wavelength of 1550 nm, to acquire centimeter resolution depth images of low signature objects at stand-off distances of up to one kilometer. The scenes of interest were scanned by the transceiver system using pulsed laser illumination with an average optical power of less than 600 mu W and per-pixel acquisition times of between 0.5 ms and 20 ms. The fiber-pigtailed InGaAs/InP detector was Peltier-cooled and operated at a temperature of 230 K. This detector was used in electrically gated mode with a single-photon detection efficiency of about 26% at a dark count rate of 16 kilocounts per second. The system's overall instrumental temporal response was 144 ps full width at half maximum. Measurements made in daylight on a number of target types at ranges of 325 m, 910 m, and 4.5 km are presented, along with an analysis of the depth resolution achieved. (c) 2013 Optical Society of America

Original languageEnglish
Pages (from-to)22098-22113
Number of pages16
JournalOptics Express
Volume21
Issue number19
DOIs
Publication statusPublished - 23 Sep 2013

Keywords

  • MU-M
  • PERFORMANCE
  • SENSOR
  • PHOTODIODES
  • DESIGN
  • CMOS
  • ACQUISITION

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    McCarthy, A., Ren, X., Della Frera, A., Gemmell, N. R., Krichel, N. J., Scarcella, C., Ruggeri, A., Tosi, A., & Buller, G. S. (2013). Kilometer-range depth imaging at 1550 nm wavelength using an InGaAs/InP single-photon avalanche diode detector. Optics Express, 21(19), 22098-22113. https://doi.org/10.1364/OE.21.022098