Is Interfacial Silicon Carbide Necessary for the Epitaxy of Diamond on (100) Silicon?

Phillip John, David K. Milne, Michael G. Jubber, J. I B Wilson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Original language	English
Pages (from-to)	30-33
Number of pages	4
Journal	Chemical Vapor Deposition
Volume	3
Issue number	1
DOIs	https://doi.org/10.1002/cvde.19970030104
Publication status	Published - 1997

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10.1002/cvde.19970030104

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title = "Is Interfacial Silicon Carbide Necessary for the Epitaxy of Diamond on (100) Silicon?",

author = "Phillip John and Milne, \{David K.\} and Jubber, \{Michael G.\} and Wilson, \{J. I B\}",

year = "1997",

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language = "English",

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pages = "30--33",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH Verlag",

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T1 - Is Interfacial Silicon Carbide Necessary for the Epitaxy of Diamond on (100) Silicon?

AU - John, Phillip

AU - Milne, David K.

AU - Jubber, Michael G.

AU - Wilson, J. I B

PY - 1997

Y1 - 1997

UR - https://www.scopus.com/pages/publications/0031071449

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DO - 10.1002/cvde.19970030104

M3 - Article

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JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

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