Original language | English |
---|---|
Pages (from-to) | 30-33 |
Number of pages | 4 |
Journal | Chemical Vapor Deposition |
Volume | 3 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1997 |
Is Interfacial Silicon Carbide Necessary for the Epitaxy of Diamond on (100) Silicon?
Phillip John, David K. Milne, Michael G. Jubber, J. I B Wilson
Research output: Contribution to journal › Article › peer-review
2
Citations
(Scopus)