INIS
growth
100%
investigations
100%
oxygen
100%
thin films
100%
deposition
100%
lasers
100%
zinc oxides
100%
films
60%
concentration
40%
surfaces
40%
carriers
40%
crystals
20%
substrates
20%
spectra
20%
layers
20%
x-ray diffraction
20%
temperature range 0273-0400 k
20%
temperature dependence
20%
devices
20%
photoluminescence
20%
crystallography
20%
electroluminescence
20%
annealing
20%
morphology
20%
buffers
20%
Engineering
Carrier Concentration
100%
Pulsed Laser
100%
Thin Films
100%
Surface Quality
50%
Ray Diffraction
50%
One Step
50%
Crystallographic Quality
50%
Blue Band
50%
Crystal Quality
50%
Room Temperature
50%
Surface Morphology
50%
Crystal Surface
50%
Buffer Layer
50%
Material Science
Al2O3
100%
ZnO
100%
Pulsed Laser Deposition
100%
Film
100%
Thin Films
100%
Carrier Concentration
66%
Surface Morphology
33%
Surface Property
33%
Photoluminescence
33%
Buffer Layer
33%
X-Ray Diffraction
33%
Electroluminescence
33%