Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition

D. J. Rogers; F. Hosseini Teherani; T. Monteiro; M. Soares; A. Neves; M. Carmo; S. Pereira; M. R. Correia; A. Lusson; E. Alves; N. P. Barradas; J. K. Morrod; K. A. Prior; P. Kung; A. Yasan; M. Razeghi

doi:10.1002/pssc.200564756

Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition

D. J. Rogers, F. Hosseini Teherani, T. Monteiro, M. Soares, A. Neves, M. Carmo, S. Pereira, M. R. Correia, A. Lusson, E. Alves, N. P. Barradas, J. K. Morrod, K. A. Prior, P. Kung, A. Yasan, M. Razeghi

School of Engineering & Physical Sciences

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18 Citations (Scopus)

Abstract

In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility (~260 cm ²/Vs) and a carrier concentration of ~1.8 × 10¹⁹ cm^-3. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn₂As₂O ₇. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450°C (without post-annealing). © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

Original language	English
Pages (from-to)	1038-1041
Number of pages	4
Journal	Physica Status Solidi C - Current Topics in Solid State Physics
Volume	3
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200564756
Publication status	Published - 2006
Event	12th International Conference on II-VI Compounds - Warsaw, Poland Duration: 12 Sept 2005 → 16 Sept 2005

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Rogers, D. J., Teherani, F. H., Monteiro, T., Soares, M., Neves, A., Carmo, M., Pereira, S., Correia, M. R., Lusson, A., Alves, E., Barradas, N. P., Morrod, J. K., Prior, K. A., Kung, P., Yasan, A., & Razeghi, M. (2006). Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition. Physica Status Solidi C - Current Topics in Solid State Physics, 3(4), 1038-1041. https://doi.org/10.1002/pssc.200564756

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title = "Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition",

abstract = "In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility (~260 cm 2/Vs) and a carrier concentration of ~1.8 × 1019 cm-3. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn2As2O 7. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450°C (without post-annealing). {\textcopyright} 2006 WILEY-VCH Verlag GmbH & Co. KGaA.",

author = "Rogers, {D. J.} and Teherani, {F. Hosseini} and T. Monteiro and M. Soares and A. Neves and M. Carmo and S. Pereira and Correia, {M. R.} and A. Lusson and E. Alves and Barradas, {N. P.} and Morrod, {J. K.} and Prior, {K. A.} and P. Kung and A. Yasan and M. Razeghi",

year = "2006",

doi = "10.1002/pssc.200564756",

language = "English",

volume = "3",

pages = "1038--1041",

journal = "Physica Status Solidi C - Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "4",

note = "12th International Conference on II-VI Compounds ; Conference date: 12-09-2005 Through 16-09-2005",

}

Rogers, DJ, Teherani, FH, Monteiro, T, Soares, M, Neves, A, Carmo, M, Pereira, S, Correia, MR, Lusson, A, Alves, E, Barradas, NP, Morrod, JK, Prior, KA, Kung, P, Yasan, A & Razeghi, M 2006, 'Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition', Physica Status Solidi C - Current Topics in Solid State Physics, vol. 3, no. 4, pp. 1038-1041. https://doi.org/10.1002/pssc.200564756

TY - JOUR

T1 - Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition

AU - Rogers, D. J.

AU - Teherani, F. Hosseini

AU - Monteiro, T.

AU - Soares, M.

AU - Neves, A.

AU - Carmo, M.

AU - Pereira, S.

AU - Correia, M. R.

AU - Lusson, A.

AU - Alves, E.

AU - Barradas, N. P.

AU - Morrod, J. K.

AU - Prior, K. A.

AU - Kung, P.

AU - Yasan, A.

AU - Razeghi, M.

PY - 2006

Y1 - 2006

N2 - In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility (~260 cm 2/Vs) and a carrier concentration of ~1.8 × 1019 cm-3. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn2As2O 7. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450°C (without post-annealing). © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

AB - In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility (~260 cm 2/Vs) and a carrier concentration of ~1.8 × 1019 cm-3. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn2As2O 7. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450°C (without post-annealing). © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

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U2 - 10.1002/pssc.200564756

DO - 10.1002/pssc.200564756

M3 - Article

SN - 1862-6351

VL - 3

SP - 1038

EP - 1041

JO - Physica Status Solidi C - Current Topics in Solid State Physics

JF - Physica Status Solidi C - Current Topics in Solid State Physics

IS - 4

T2 - 12th International Conference on II-VI Compounds

Y2 - 12 September 2005 through 16 September 2005

ER -

Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition

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