Investigation of silicon isolated double quantum-dot energy levels for quantum computation

Michael G. Tanner*, David G. Hasko, David A. Williams

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The fabrication methods and low-temperature electron transport measurements are presented for circuits consisting of a single-island single-electron transistor coupled to an isolated double quantum-dot. Capacitively coupled 'trench isolated' circuit elements are fabricated in highly doped silicon-on-insulator using electron beam lithography and reactive ion etching. Polarisation of the isolated double quantum-dot is observed as a function of the side gate potentials through changes in the conductance characteristics of the single-electron transistor. Microwave signals are coupled into the device for excitation of the polarisation states of the isolated double quantum-dot. Resonances attributed to an energy level splitting of the polarisation states are observed with an energy separation appropriate for quantum computation.

Original languageEnglish
Pages (from-to)1818-1822
Number of pages5
JournalMicroelectronic Engineering
Issue number4-9
Publication statusPublished - Apr 2006


  • Coulomb blockade
  • Double quantum-dot
  • Microwave
  • Quantum computer
  • Qubit
  • Single-electron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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