Investigation of silicon isolated double quantum-dot energy levels for quantum computation

The fabrication methods and low-temperature electron transport measurements are presented for circuits consisting of a single-island single-electron transistor coupled to an isolated double quantum-dot. Capacitively coupled 'trench isolated' circuit elements are fabricated in highly doped silicon-on-insulator using electron beam lithography and reactive ion etching. Polarisation of the isolated double quantum-dot is observed as a function of the side gate potentials through changes in the conductance characteristics of the single-electron transistor. Microwave signals are coupled into the device for excitation of the polarisation states of the isolated double quantum-dot. Resonances attributed to an energy level splitting of the polarisation states are observed with an energy separation appropriate for quantum computation.