Investigation of silicon isolated double quantum-dot energy levels for quantum computation

Michael G. Tanner, David G. Hasko, David A. Williams

Research output: Contribution to journalArticle

Abstract

The fabrication methods and low-temperature electron transport measurements are presented for circuits consisting of a single-island single-electron transistor coupled to an isolated double quantum-dot. Capacitively coupled 'trench isolated' circuit elements are fabricated in highly doped silicon-on-insulator using electron beam lithography and reactive ion etching. Polarisation of the isolated double quantum-dot is observed as a function of the side gate potentials through changes in the conductance characteristics of the single-electron transistor. Microwave signals are coupled into the device for excitation of the polarisation states of the isolated double quantum-dot. Resonances attributed to an energy level splitting of the polarisation states are observed with an energy separation appropriate for quantum computation.

Original languageEnglish
Pages (from-to)1818-1822
Number of pages5
JournalMicroelectronic Engineering
Volume83
Issue number4-9
DOIs
Publication statusPublished - Apr 2006

Fingerprint

Quantum computers
Silicon
quantum computation
Electron energy levels
Single electron transistors
Semiconductor quantum dots
single electron transistors
energy levels
quantum dots
Polarization
silicon
polarization
Electron beam lithography
Networks (circuits)
Reactive ion etching
lithography
Microwaves
insulators
etching
electron beams

Keywords

  • Coulomb blockade
  • Double quantum-dot
  • Microwave
  • Quantum computer
  • Qubit
  • Single-electron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "The fabrication methods and low-temperature electron transport measurements are presented for circuits consisting of a single-island single-electron transistor coupled to an isolated double quantum-dot. Capacitively coupled 'trench isolated' circuit elements are fabricated in highly doped silicon-on-insulator using electron beam lithography and reactive ion etching. Polarisation of the isolated double quantum-dot is observed as a function of the side gate potentials through changes in the conductance characteristics of the single-electron transistor. Microwave signals are coupled into the device for excitation of the polarisation states of the isolated double quantum-dot. Resonances attributed to an energy level splitting of the polarisation states are observed with an energy separation appropriate for quantum computation.",
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Investigation of silicon isolated double quantum-dot energy levels for quantum computation. / Tanner, Michael G.; Hasko, David G.; Williams, David A.

In: Microelectronic Engineering, Vol. 83, No. 4-9, 04.2006, p. 1818-1822.

Research output: Contribution to journalArticle

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